IR21368STRPBF

Gate Driver Overview

The IR21368STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver manufactured by Infineon Technologies. It features an inverting logic interface and is housed in a 28-SOIC surface-mount package. The device supports a maximum blocking voltage of 600 V with output source and sink currents of +0.165 A and -0.375 A respectively. Key timing parameters include a rise time of 125 ns and a fall time of 50 ns. It operates within a supply voltage range of 10 V to 20 V and is rated for junction temperatures up to 150°C.

Gate Driver Feature Summary

• Integrated ultra-fast bootstrap diode with low on-resistance
• High-voltage capability supporting up to 600 V blocking voltage
• Inverting logic interface compatible with standard control ICs

Gate Driver Applications

• Half-bridge gate driver circuits
• Power MOSFET switching applications
• IGBT gate driving systems

Gate Driver Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure correct package type and tape-and-reel specifications. Confirm that the component meets required thermal and electrical ratings for the specific application environment before procurement.

Gate Driver Selection Notes

Select this driver for applications requiring high-speed switching with inverting logic control. Ensure the design accommodates the specified source and sink current capabilities and the 600 V isolation requirements. Verify compatibility with the target MOSFET or IGBT gate charge characteristics.

Gate Driver Part Context

This component belongs to the IR2136x series of high-voltage gate drivers from Infineon. It is designed for robust performance in power electronics, offering integrated protection features and high-speed operation suitable for modern switching power supplies and motor drives.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult official Infineon cross-reference lists for verified alternatives.