IRDM982-035MBTR

Overview

The IRDM982-035MBTR is a high-performance, dual-channel gate driver manufactured by Infineon Technologies. It is specifically engineered to drive Silicon Carbide (SiC) MOSFETs in demanding power conversion applications. The device features an isolated supply architecture with separate input and output ground references, ensuring robust signal integrity and noise immunity. Key electrical parameters include a peak output current of 4 A for both sourcing and sinking operations, which facilitates rapid switching transitions. The unit operates within a wide supply voltage range of 15 V to 26 V for the positive rail and -5 V to -15 V for the negative rail. It incorporates integrated protection mechanisms such as desaturation detection and under-voltage lockout to safeguard connected power devices against fault conditions.

Feature Summary

• Dual-channel configuration designed for half-bridge SiC MOSFET topologies
• High peak output current capability of 4 A for fast switching performance
• Integrated desaturation fault protection for enhanced system reliability
• Wide operating supply voltage range supporting various industrial standards

Applications

• Industrial motor drives and servo systems
• Uninterruptible power supplies (UPS)
• Solar inverters and photovoltaic systems
• Battery management systems for electric vehicles

Procurement Notes

Verify that the specific orderable part number matches the required package variant and tape/reel specifications. Confirm that the selected component meets all necessary safety certifications and isolation ratings for the target application environment. Ensure compatibility with the control logic voltage levels used in the design.

Selection Notes

Select this component when driving SiC MOSFETs requiring high peak currents and fast switching speeds. Evaluate the thermal requirements of the PCB layout to manage heat dissipation effectively. Consider the isolation voltage requirements and ensure the chosen driver provides sufficient creepage and clearance distances for the intended insulation class.

Part Context

This component belongs to Infineon's family of intelligent gate drivers tailored for wide-bandgap semiconductors. It complements other discrete SiC MOSFETs and modules by providing precise control and protection. The product line emphasizes efficiency and reliability in high-power density applications, aligning with trends toward electrification and renewable energy integration.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for cross-reference information or equivalent products with similar pinouts and electrical characteristics.