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IRF1503STRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 75A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF1503STRRPBF
- Description：MOSFET N-CH 30V 75A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 140A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5730 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF1503STRRPBF
Single FETs, MOSFETs Overview
The IRF1503STRRPBF is a single N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. It utilizes HEXFET technology to achieve low on-resistance per silicon area. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 75 A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 3.3 mΩ, a gate charge of 130 nC, and a power dissipation rating of 200 W. It operates within a temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced HEXFET processing techniques for extremely low on-resistance per silicon area
- Designed as a single N-channel enhancement mode transistor for high-efficiency switching
- Capable of handling high continuous drain currents with robust thermal performance
Single FETs, MOSFETs Applications
- DC-DC converter circuits requiring low voltage drop
- Power management systems in computing equipment
- High-current load switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels due to the component's obsolete lifecycle status. Confirm that the specific suffix matches the required reel or cut tape packaging format. Ensure compatibility with existing PCB footprints designated for TO-252 packages before integration into new designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications demanding low voltage operation and high current capacity. Compare the 3.3 mΩ on-resistance against alternative devices to ensure optimal efficiency. Consider the 30 V breakdown voltage limit when designing circuits with potential voltage spikes.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a legacy product line originally developed by International Rectifier. The STRRPBF designation indicates surface mount packaging in a DPAK (TO-252) form factor with specific reel packaging characteristics.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, engineers should consult official manufacturer substitution guides or evaluate equivalent parts with matching voltage, current, and package specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
