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IRF2204SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 170A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF2204SPBF
- Description：MOSFET N-CH 40V 170A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 130A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5890 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF2204SPBF
Single FETs, MOSFETs Overview
The IRF2204SPBF is a single N-channel HEXFET power MOSFET in a D2PAK (TO-262) package. It features a 40V drain-source breakdown voltage and an ultra-low on-resistance of 3.6mΩ at VGS=10V. The device supports a continuous drain current of 170A at 25°C case temperature, with a pulsed current rating of 850A. It offers fast switching characteristics, including a total gate charge of 130nC and a dynamic dv/dt rating. Thermal performance includes a junction-to-case resistance of 0.75°C/W and operation up to a maximum junction temperature of 175°C.
Single FETs, MOSFETs Feature Summary
- Advanced process technology achieving extremely low on-resistance per silicon area
- Fast switching speed combined with improved repetitive avalanche rating
- Dynamic dv/dt rating for robust performance under rapid voltage transitions
Single FETs, MOSFETs Applications
- Industrial motor drive
- DC-DC converters
- Power supply circuits
Single FETs, MOSFETs Procurement Notes
Verify the component status as End-of-Life (EOL) before procurement planning. Confirm that the specific D2PAK package variant matches the design requirements. Ensure that the industrial market qualification aligns with the application environment. Review the datasheet for any updates regarding lead-free specifications and assembly guidelines.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling within a 40V system. Evaluate thermal management strategies given the 200W power dissipation capability. Consider the 175°C operating temperature limit for high-temperature environments. Verify compatibility with standard gate drive voltages of 10V or higher for optimal RDS(on) performance.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family from Infineon Technologies, utilizing advanced processing techniques. It is designed for efficiency and reliability in various power applications. The product line emphasizes low on-resistance and fast switching capabilities. It represents a legacy offering from International Rectifier, now integrated into Infineon's portfolio.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute: IRF1404ZSTRLPBF. Note that the substitute has different electrical parameters and packaging. Verify pinout compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
