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IRF6722MTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 30V 13A/56A DIRECTFT. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF6722MTRPBF
- Description：MOSFET N-CH 30V 13A/56A DIRECTFT
- Series：HEXFET®
- Mfr：International Rectifier
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.7mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 42W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DIRECTFET™ MP
- Package / Case：DirectFET™ Isometric MP
Single FETs, MOSFETs datasheet and documents for IRF6722MTRPBF
Single FETs, MOSFETs Overview
The IRF6722MTRPBF is an N-channel Power MOSFET from the DirectFET(M) family, utilizing a micro-template package designated as IRF66MP-25. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) limit of 20 V. The device supports a continuous drain current (ID) of up to 56 A at 25°C. On-resistance specifications include a maximum RDS(on) of 7.7 mΩ at 10 V gate drive and 10.8 mΩ at 4.5 V. The threshold voltage (VGS(th)) ranges from 1.4 V to 2.4 V, with a typical value of 1.8 V. Thermal performance is characterized by a junction-to-case thermal resistance (RthJC) of 3 K/W, allowing operation up to a maximum junction temperature of 150°C.
Single FETs, MOSFETs Feature Summary
- DirectFET(M) technology enables direct die attachment to the PCB copper plane for superior thermal dissipation.
Single FETs, MOSFETs Applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'TRPBF' indicates tape-and-reel packaging and lead-free composition. Confirm the component matches the DirectFET(M) form factor and that the manufacturer documentation explicitly lists this part number in the official product catalog. Ensure the source document is an authorized Infineon datasheet or specification sheet.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage applications requiring high current handling and efficient heat transfer without traditional leads. Evaluate the 30 V rating against system voltage peaks. Consider the DirectFET(M) mounting requirements and PCB layout constraints necessary to utilize the bottom-side thermal pad effectively.
Single FETs, MOSFETs Part Context
This part belongs to the International Rectifier (Infineon) DirectFET(M) series, designed for power stages where thermal management is critical. The DirectFET architecture integrates the silicon die directly into the package substrate, eliminating wire bonds and reducing thermal resistance compared to standard surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided reference data. Cross-reference tools should be consulted for electrically equivalent N-channel MOSFETs with similar 30 V ratings and DirectFET compatibility.
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