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IRF7306PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 3.6A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7306PBF
- Description：MOSFET 2P-CH 30V 3.6A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：440pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7306PBF
FET, MOSFET Arrays Overview
The IRF7306PBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a SOIC-8 surface-mount package and utilizes silicon technology. The device provides a drain-source breakdown voltage of 30 V and supports continuous drain currents up to 3.6 A. Its on-resistance is rated at 100 mOhms, with a gate charge of 16.7 nC. Operating temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 2 W.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for efficient circuit integration
- HEXFET architecture for optimized switching performance
- Logic-level compatible gate drive requirements
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distribution channels due to the discontinued status. Confirm RoHS compliance documentation matches specific manufacturing dates. Validate package integrity upon receipt as the product is no longer in active production cycles.
FET, MOSFET Arrays Selection Notes
Evaluate thermal resistance parameters against system heat dissipation capabilities. Ensure gate drive voltages align with the specified enhancement mode operation limits. Consider alternative components if current sourcing availability is critical for ongoing production needs.
FET, MOSFET Arrays Part Context
This component belongs to the Infineon HEXFET family, known for high-speed switching capabilities. It serves as a discrete power semiconductor solution within the broader transistor portfolio. The SOIC-8 packaging facilitates automated surface-mount assembly processes.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference tools for verified substitute part numbers. Verify pin compatibility and electrical specifications before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
