IRF7910PBF

FET, MOSFET Arrays Overview

The IRF7910PbF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 12V drain-source voltage rating and a maximum continuous drain current of 10A at 25°C, reducing to 7.9A at 70°C. The device has a maximum on-resistance of 15mΩ at VGS=4.5V and 50mΩ at VGS=2.8V. Total gate charge is typically 17nC, with Miller charge at 5.2nC. Maximum power dissipation is 2.0W at 25°C. Junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Ultra-low gate impedance for efficient switching control
• Very low RDS(on) to minimize conduction losses
• Fully characterized avalanche voltage and current capabilities

FET, MOSFET Arrays Applications

• High frequency 3.3V and 5V input point-of-load synchronous buck converters
• Power management for networking applications
• Power management for computing applications
• Power management for portable applications

FET, MOSFET Arrays Procurement Notes

Verify the component marking matches the official datasheet specifications. Confirm the package type is SO-8 and the polarity is dual N-channel. Ensure the ordering suffix indicates lead-free construction if required by your design constraints. Cross-reference the manufacturer part number to confirm authenticity and traceability before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage synchronous rectification where compact surface-mount packaging is required. Evaluate thermal performance based on the 62.5 K/W junction-to-ambient resistance. Consider the 12V breakdown limit when designing circuits with higher supply voltages. Check gate drive requirements against the 15mΩ on-resistance specification at your operating VGS level.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for high-frequency switching applications. The dual configuration integrates two independent N-channel devices within a single eight-pin outline, optimizing board space for bridge or half-bridge topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 12V rating, SO-8 package, and dual N-channel configuration. Verify that thermal and electrical characteristics meet or exceed the original specifications.