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IRF9Z24NS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 12A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF9Z24NS
- Description：MOSFET P-CH 55V 12A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：175mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF9Z24NS
Single FETs, MOSFETs Overview
The IRF9Z24NS is a single P-channel power MOSFET from Infineon Technologies, utilizing advanced HEXFET processing. It features a -55V drain-source voltage rating and a maximum continuous drain current of -12A at 25°C. The device exhibits a maximum on-resistance of 175 mΩ at 10V gate drive. Key electrical parameters include a typical total gate charge of 12.7 nC and a gate-drain charge of 6.7 nC. It supports junction temperatures up to 175°C with a thermal resistance of 3.3 K/W.
Single FETs, MOSFETs Feature Summary
- Advanced HEXFET technology for low on-resistance per silicon area
- Fast switching speed capabilities
- Ruggedized design fully rated for avalanche energy
Single FETs, MOSFETs Applications
- Power management circuits requiring P-channel switching
- Low-profile surface mount power applications
- General purpose power control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and package variant against the official datasheet before procurement. Confirm that the component meets the required RoHS compliance status for your region. Ensure the supply chain source provides valid traceability documentation. Check for any recent product discontinuance notifications or lifecycle changes directly from the manufacturer.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel configuration is required in a D2PAK surface-mount package. Consider the 175 mΩ on-resistance for conduction loss calculations at 10V gate drive. Evaluate the 175°C maximum junction temperature for high-thermal environments. Verify that the -55V breakdown voltage aligns with the system's operating voltage requirements.
Single FETs, MOSFETs Part Context
This part belongs to the fifth-generation HEXFET family from International Rectifier, now part of Infineon Technologies. These devices are characterized by low on-resistance and fast switching speeds. The IRF9Z24NS specifically offers a surface-mount solution compared to through-hole variants like the IRF9Z24NL within the same electrical specification family.
Single FETs, MOSFETs Replacement Considerations
The IRF9Z24NL serves as a verified through-hole alternative with identical electrical characteristics but utilizes a TO-262AA package instead of the D2PAK form factor.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
