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IRFBC42 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFBC42
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRFBC42
Single FETs, MOSFETs Overview
The IRFBC42 is an N-channel silicon power MOSFET manufactured by Harris Corporation. It features a 600 V drain-source voltage rating and a continuous drain current of 5.4 A at case temperature. The device exhibits a maximum on-resistance of 1.6 Ohms at 10 V gate drive. It is housed in a TO-220AB through-hole package with a maximum power dissipation of 125 W under case cooling conditions.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction for high-speed switching applications
- Through-hole TO-220AB packaging designed for efficient thermal management
- High breakdown voltage capability suitable for medium-voltage power circuits
Single FETs, MOSFETs Applications
- General-purpose power switching
- DC-DC converter output stages
- Motor control driver circuits
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin, as Harris Corporation assets were acquired by other entities. Confirm RoHS compliance status, as sources indicate conflicting information regarding regulatory adherence. Ensure the package type matches the required TO-220AB specification for proper mounting and thermal interface integration.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rating and moderate current handling are required for through-hole assembly. The 1.6 Ohm on-resistance dictates specific conduction loss calculations. Consider the thermal resistance characteristics of the TO-220 package for heat sink design requirements in the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to the IRFBC series of N-channel power MOSFETs from Harris Corporation. The series includes variants such as the IRFBC40, which shares similar electrical characteristics but may differ slightly in current or resistance ratings. These devices were historically significant in the power semiconductor market before corporate restructuring.
Single FETs, MOSFETs Replacement Considerations
The IRF3415PBF is listed as a comparable alternative in some databases, though it typically differs in package and voltage specifications. Verify pinout compatibility and electrical limits against original datasheets before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
