IRFI840G

Description：MOSFET N-CH 500V 4.6A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:7889d4435275 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRFI840G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 4.6A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFI840G

Description：MOSFET N-CH 500V 4.6A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：850mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for IRFI840G

IRFI840G

Single FETs, MOSFETs Overview

The IRFI840G is a third-generation N-channel power MOSFET from Vishay Siliconix, housed in an isolated TO-220 FULLPAK package. It features a drain-source voltage (VDS) of 500 V and a continuous drain current (ID) of 4.6 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 0.85 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge (Qg) of 67 nC, turn-on delay time of 14 ns, and rise time of 22 ns. The device supports a peak diode recovery dV/dt rating of 3.5 V/ns and offers high voltage isolation of 2.5 kV RMS.

Single FETs, MOSFETs Feature Summary

Isolated package design eliminates the need for additional insulating hardware in commercial-industrial applications.
High voltage isolation capability equivalent to using a standard mica barrier with conventional TO-220 products.
Third-generation technology provides optimized switching speed and ruggedized device design.

Single FETs, MOSFETs Applications

Commercial and industrial power switching circuits
High voltage isolation interfaces
Applications requiring simplified heatsink mounting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists IRFI840GPbF as the lead-free variant. Confirm that the required component matches the exact part number and compliance status needed for your assembly process. Ensure compatibility with the TO-220 FULLPAK footprint during procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation without separate insulators. The TO-220 FULLPAK allows direct mounting to a heatsink using a single clip or screw. Consider the 0.85 Ω RDS(on) and 4.6 A current limits for thermal management. Verify that the 2.5 kV RMS isolation meets the safety requirements of the target application.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix third-generation power MOSFET family. These transistors are engineered to balance fast switching performance with low on-resistance. The product line utilizes silicon technology to provide cost-effective solutions for high-voltage switching applications across various electronic systems.