IRFL024ZPBF

Description：MOSFET N-CH 55V 5.1A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:25e4457031c2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFL024ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 5.1A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFL024ZPBF

Description：MOSFET N-CH 55V 5.1A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：57.5mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRFL024ZPBF

IRFL024ZPBF

Single FETs, MOSFETs Overview

The IRFL024ZPbF is a HEXFET® Power MOSFET in an SOT-223 package. It features a 55V drain-source breakdown voltage and a maximum continuous drain current of 5.1A at 25°C. The device has a maximum on-resistance of 57.5mΩ at VGS=10V. Gate charge is typically 9.1nC, with Miller charge at 3.9nC. Junction temperature ranges from -55°C to 150°C. Thermal resistance (junction-to-ambient) is 45°C/W on a copper board.

Single FETs, MOSFETs Feature Summary

Utilizes advanced process technology for ultra-low on-resistance per silicon area.
Supports repetitive avalanche operation up to the maximum junction temperature.
Features fast switching speed for efficient power conversion.
Designed with fused leads for small power applications.

Single FETs, MOSFETs Applications

DC-DC converters
Power management circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code against official Infineon documentation. Confirm the package type matches the required SOT-223 footprint. Ensure the operating environment stays within the specified thermal limits. Check for RoHS compliance status if required by your design standards. Validate that the gate threshold voltage meets your logic level requirements.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance is critical for efficiency in small power applications. Consider the 55V rating for standard low-voltage DC systems. Evaluate the thermal performance based on your PCB layout and ambient conditions. Compare gate charge requirements against your driver capabilities. Ensure the SOT-223 package fits your assembly constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET® Power MOSFET family from Infineon Technologies. It is designed for industrial market applications. The device uses N-channel enhancement mode technology. It is lead-free compliant. The product is intended for general-purpose switching applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives with similar RDS(on) and VDS ratings. Verify thermal resistance values match your cooling solution. Ensure gate charge characteristics are compatible with existing drivers.