IRFL024ZTRPBF

$0.55

Description：MOSFET N-CH 55V 5.1A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d7c19a8dabf9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFL024ZTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 5.1A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFL024ZTRPBF

Description：MOSFET N-CH 55V 5.1A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：57.5mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRFL024ZTRPBF

IRFL024ZTRPBF

Single FETs, MOSFETs Overview

The IRFL024ZTRPBF is a single N-channel HEXFET Power MOSFET manufactured by Infineon Technologies. It features a 55V drain-to-source breakdown voltage and an ultra-low on-resistance of 57.5mΩ maximum at VGS=10V. The device supports a continuous drain current of 5.1A and operates with a junction temperature range from -55°C to +150°C. Packaged in a SOT-223 (TO-261AA) surface-mount housing, it utilizes advanced silicon processing for fast switching speeds and improved repetitive avalanche ratings.

Single FETs, MOSFETs Feature Summary

Utilizes advanced HEXFET process technology to achieve extremely low on-resistance per silicon area.
Designed for high thermal reliability with a 150°C operating junction temperature limit.
Features fast switching characteristics suitable for high-frequency power conversion applications.
Supports repetitive avalanche energy operation up to the maximum junction temperature.

Single FETs, MOSFETs Applications

DC-DC converter circuits
Power management modules
High-efficiency motor control systems

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required package type and lead-free status. Confirm the specific manufacturer part number against official Infineon documentation to ensure compatibility with design specifications. Check for any recent product lifecycle changes or qualification standards updates before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 55V rating and low conduction loss are required in a compact SOT-223 footprint. Evaluate the thermal resistance parameters against the expected ambient temperature and PCB copper area to ensure safe operating limits are maintained under continuous load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs, known for combining high voltage capability with low on-state resistance. The Z suffix indicates a lead-free manufacturing process compliant with environmental directives. It serves as a discrete switching element within broader power electronics architectures.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure replacement parts match the 55V voltage class, SOT-223 package dimensions, and electrical performance thresholds without altering circuit functionality.

Single FETs, MOSFETs FAQ

Is the IRFL024ZTRPBF rated for repetitive avalanche operation?

Yes, the datasheet specifies that repetitive avalanche is allowed up to the maximum junction temperature of 150°C, subject to pulse width and duty cycle limitations.