ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRFP4310ZPBFXKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFP4310ZPBFXKMA1
- Description：TRENCH >=100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：4V @ 1.037mA
- Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6860 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：280W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO247-3-901
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IRFP4310ZPBFXKMA1
Single FETs, MOSFETs Overview
The IRFP4310ZPBFXKMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing StrongIRFET technology. It features a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 120 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 6 mΩ at 10 V gate drive. It operates within a junction temperature range of -55°C to +175°C and offers a power dissipation rating of 250 W in a TO-220AB-3 package.
Single FETs, MOSFETs Feature Summary
- StrongIRFET technology for high efficiency and ruggedness
- Low on-resistance for reduced conduction losses
- Enhanced avalanche capability and dynamic dV/dt performance
- Lead-free packaging compliant with RoHS standards
Single FETs, MOSFETs Applications
- High-efficiency synchronous rectification in switch-mode power supplies
- Uninterruptible power supply systems
- Hard-switched and high-frequency power circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix PBFXKMA1 against official Infineon documentation to confirm package type and tape/reel specifications. Ensure the component matches the required thermal management capabilities for the intended application environment. Cross-reference the datasheet revision date to guarantee parameter accuracy during procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust 100 V switching with high current handling. Evaluate the thermal resistance characteristics relative to the system's cooling infrastructure. Confirm that the gate charge parameters align with the driving circuit's speed requirements for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the StrongIRFET family, designed for low-voltage power switching applications. It integrates advanced trench cell technology to minimize on-state resistance while maintaining high reliability. The product line targets industrial and consumer power conversion markets demanding high efficiency and compact form factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic replacements may not match the specific avalanche ruggedness or thermal characteristics of the StrongIRFET architecture.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
