IRG4PH50KPBF

Description：IGBT 1200V 45A TO-247AC
Series：-

SKU:824847ac6711 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 45A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：45 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 24A
Power - Max：200 W
Switching Energy：1.21mJ (on), 2.25mJ (off)
Input Type：Standard
Gate Charge：180 nC
Td (on/off) @ 25°C：36ns/200ns
Test Condition：960V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH50KPBF

Overview

The IRG4PH50KPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IRG4 series, manufactured by Infineon Technologies. It utilizes UltraFast diode technology and is housed in a TO-247AC package for through-hole mounting. The device features a maximum collector-emitter voltage of 1200V and a continuous collector current of 45A at 25°C. Key electrical parameters include a saturation voltage of 3.28V, a power dissipation rating of 200W, and an operating temperature range from -55°C to +150°C.

Feature Summary

UltraFast soft recovery diode technology integrated with the IGBT chip
High thermal efficiency provided by the TO-247AC leaded package design
Optimized for low switching losses and high reliability in hard-switching applications

Applications

Motor drives and inverters
Switch-mode power supplies
DC-DC converters
Induction heating systems

Procurement Notes

Verify component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required RoHS compliance status. Ensure storage conditions adhere to manufacturer guidelines to prevent moisture damage prior to soldering. Cross-reference datasheet revisions to validate parameter consistency.

Selection Notes

Select this component when a 1200V blocking capability is required alongside a 45A continuous current rating. The TO-247AC package facilitates effective heat sinking for high-power density designs. Consider the UltraFast diode characteristics if reverse recovery performance is critical for the target circuit topology.

Part Context

This discrete IGBT belongs to the IRG4 product family, which represents fourth-generation silicon technology. The series focuses on improving parameter distribution tightness and overall system efficiency compared to previous generations.