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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG7PH42UD-EPBF is an N-channel IGBT from Infineon Technologies, housed in a TO-247AC package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 85 A at 25°C. The device supports a maximum power dissipation of 320 W and operates within a junction temperature range of -55°C to +150°C. It utilizes a single transistor configuration with three pins for through-hole mounting.
Verify the exact suffix against official Infineon documentation to confirm the specific variant and compliance status. Ensure the ordering part number matches the required electrical characteristics and packaging type before procurement. Cross-reference with authorized distributors to validate authenticity and traceability.
Select this component for applications requiring high voltage isolation and moderate current handling. Consider the thermal resistance and package constraints when designing heat sinks. Verify that the gate drive requirements align with the specified voltage limits and switching characteristics for optimal performance.
This IGBT belongs to Infineon's discrete power semiconductor portfolio, designed for robust industrial and commercial power conversion applications. The TO-247AC package provides a reliable mechanical interface for high-power modules. It complements other high-voltage devices in the company's lineup for complete system solutions.