SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG7T300CL12B is a low-side chopper IGBT module with an integrated high-side diode, housed in the POWIR 62™ package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 300 A at TC = 80°C. The saturation voltage is 1.90 V at IC = 300 A. Switching losses include Eon of 16.9 mJ and Eoff of 24.8 mJ at TJ = 25°C. The module supports a maximum power dissipation of 1600 W and operates within a junction temperature range of -40 to +150 °C. Thermal resistance from junction to case is 0.099 °C/W for the IGBT.
Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Ensure the ordering suffix matches the specific POWIR 62™ configuration required for your thermal management system. Cross-reference datasheet revision dates to confirm compliance with current RoHS standards and qualification levels before finalizing procurement orders.
Select this module when designing systems requiring high current handling up to 300 A with robust short-circuit tolerance. Evaluate thermal impedance curves against your heat sink capabilities to maintain junction temperatures below 150 °C. Consider gate resistance values to optimize the trade-off between switching speed and electromagnetic interference during operation.
This component belongs to the POWIR series of insulated gate bipolar transistors designed for industrial power applications. It integrates both N-channel IGBT and freewheeling diode functionalities into a single flange-mount unit. The device represents a transition period product originally documented under International Rectifier specifications prior to corporate restructuring.
Direct replacements must match the POWIR 62™ footprint and terminal layout. Verify that substitute modules offer equivalent 1200 V blocking voltage and comparable 300 A continuous current ratings. Confirm thermal resistance parameters align with existing cooling infrastructure requirements.