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The IRGB4B60KD1PBF is an Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by International Rectifier. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A. The device utilizes NPT technology for robust performance and is housed in a D2PAK surface-mount package. Key electrical characteristics include a maximum on-state collector-emitter voltage of 2.5 V at 4 A and a typical switching time of 89 ns.
Verify the specific suffix 'KD1' against the manufacturer's official datasheet to confirm pinout and thermal specifications. Ensure the component matches the required D2PAK footprint and lead-free compliance standards before integration into the design.
Select this component for designs requiring a 600 V rating with moderate current handling capabilities. Consider the integrated diode's soft recovery characteristics if minimizing electromagnetic interference during commutation is critical. Verify thermal management requirements for the D2PAK package under expected load conditions.
This part belongs to the IRGB series of IGBTs from International Rectifier, now part of Infineon Technologies. The series is characterized by high reliability and efficiency in power conversion applications. The D2PAK package provides a compact solution for surface-mount assembly while maintaining adequate thermal dissipation for medium-power circuits.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's cross-reference guide for equivalent devices.