IRGC4274B

Description：IGBT TRENCH 650V DIE
Series：-

SKU:ed33eab82150 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 150A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：310 nC
Td (on/off) @ 25°C：95ns/220ns
Test Condition：400V, 150A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC4274B

Overview

The IRGC4274B is a bare die n-channel IGBT utilizing low VCE(on) trench technology. It features a 650V collector-emitter voltage rating and a 150A DC collector current capacity at 25°C, with a clamped inductive load current of 600A. The device supports a maximum junction temperature of 175°C and includes an integrated gate resistor ranging from 1.4Ω to 2.4Ω. Electrical characteristics include a typical saturation voltage of 1.0V and total gate charge of 310nC.

Feature Summary

Low switching losses combined with low on-state voltage for high efficiency
Short circuit rated capability with square reverse bias safe operating area
Positive temperature coefficient for improved current sharing in parallel operation
Integrated internal gate resistor simplifies paralleling requirements

Applications

Industrial motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment

Procurement Notes

Verify the specific ordering suffix and shipping configuration when requesting quotes. Options include unsawn wafers, die in waffle packs, or die on film. Confirm if Known Good Die (KGD) testing is required prior to purchase. Ensure all handling protocols meet ESD safety standards and clean room classifications during procurement logistics.

Selection Notes

Select this component for applications requiring rugged transient performance and tight parameter distribution. The positive temperature coefficient facilitates reliable parallel operation without complex current balancing circuits. Verify that the system thermal management can support the 175°C maximum junction temperature limit under full load conditions.

Part Context

This product belongs to Infineon's industrial market qualified IGBT portfolio. It is designed as a bare silicon die intended for integration into custom power modules. The device utilizes advanced trench gate technology to optimize the trade-off between conduction and switching losses for high-frequency industrial applications.