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The IRGP4750D-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon. It features a maximum collector-emitter voltage of 650 V and a continuous collector current rating of 70 A. The device utilizes a TO-247AC through-hole package with three pins. It operates within a temperature range of -40 °C to +175 °C and has a maximum power dissipation of 273 W. The IGBT supports switching frequencies between 8 kHz and 30 kHz, with a rated energy of 380 µJ.
Verify the manufacturer origin, as International Rectifier was acquired by Infineon. Confirm the suffix 'EPBF' indicates enhanced product compliance and lead-free status according to official datasheets. Ensure the component matches the TO-247AC package dimensions and pinout configuration before integration into the circuit design.
Select this component for applications requiring high current handling at 650 V levels. Consider the 70 A continuous current rating and 273 W power dissipation capabilities when designing heat sinks. Verify that the switching frequency requirements fall within the 8–30 kHz operational range specified in the technical documentation.
This component belongs to the IRGP series of IGBTs from International Rectifier. The 'EPBF' suffix typically denotes an enhanced version with specific environmental compliance attributes. It is designed for medium-power industrial applications where reliability and thermal performance are critical factors in system design.
Check for direct equivalents such as the IRGP4750DPBF, ensuring functional compatibility. Verify pinout alignment and thermal characteristics against alternative TO-247 packages. Consult official substitution guides from Infineon for validated cross-references.