IRGR4607DTRRPBF

Overview

The IRGR4607DTRRPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes TRENCH technology and is housed in a D-Pak (TO-252AA) surface-mount package. The device features a maximum collector-to-emitter voltage of 600 V and supports a continuous collector current of 11 A at 25°C case temperature. Key electrical parameters include a typical saturation voltage of 1.75 V at 4.0 A and a maximum power dissipation of 58 W at 25°C. The component operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Features low on-state voltage and switching losses for high efficiency across wide application ranges.
• Supports a 5µs short circuit safe operating area and square reverse bias safe operating area.
• Includes an ultrafast soft recovery diode to minimize reverse recovery energy and peak current.
• Positive on-state voltage temperature coefficient enables excellent current sharing in parallel operation.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters
• Welding equipment

Procurement Notes

Verify the specific suffix 'RPBF' indicates the Tape and Reel Right packaging configuration as documented in the manufacturer's ordering table. Confirm RoHS compliance status and lead-free material composition through official datasheets or certificates of conformity. Ensure the procurement channel provides traceable documentation matching the International Rectifier/Infineon part identification standards.

Selection Notes

Select this component for applications requiring robust transient performance and high reliability up to 175°C junction temperature. The D-Pak package is suitable for surface-mount designs where thermal resistance to ambient is approximately 50°C/W. Consider the 600V rating and 11A continuous current capability when sizing for industrial loads. Evaluate the integrated diode characteristics against the specific reverse recovery requirements of the target topology.

Part Context

This device belongs to the IRGx4607DPbF family, which includes variants in D2Pak and TO-220AB packages. The base part number represents the core IGBT die and functionality, while the suffix determines the physical package and reel orientation. This specific model is designed for medium-power switching applications requiring ruggedness and fast diode recovery.

Replacement Considerations

Direct pin-compatible replacements within the same family include IRGS4607DTRRPBF (D2Pak) and IRGB4607DPbF (TO-220AB). Verify that any substitute maintains the 600V rating, 11A current capacity, and D-Pak footprint if mechanical constraints are strict.

FAQ

What is the maximum short circuit time supported by this IGBT?

The device supports a short circuit time of 5 microseconds under specified conditions of VCC = 400V and VGE = +15V to 0V.

Does the integrated diode exhibit hard or soft recovery characteristics?

The integrated diode features ultrafast soft recovery characteristics, which help reduce switching losses and electromagnetic interference during turn-off.

How does the positive temperature coefficient of VCE(on) benefit parallel operation?

The positive temperature coefficient ensures that as the junction temperature rises, the saturation voltage increases, naturally balancing current distribution among paralleled devices without external compensation.