IRL540S

$2.52

Description：MOSFET N-CH 100V 28A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:0a9fc14e8069 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRL540S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 28A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL540S

Description：MOSFET N-CH 100V 28A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：77mOhm @ 17A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRL540S

IRL540S

Single FETs, MOSFETs Overview

The IRL540S is a Vishay Siliconix third-generation N-Channel Power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a 100 V drain-source voltage rating and a maximum continuous drain current of 28 A at 25 °C case temperature. The device specifies an on-resistance of 0.077 Ω at VGS = 5 V and 0.11 Ω at VGS = 4 V. Key dynamic parameters include a total gate charge of 64 nC, input capacitance of 2200 pF, and a repetitive avalanche energy rating of 15 mJ. It supports a maximum junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability with RDS(on) specified at VGS = 4 V and 5 V
Repetitive avalanche rated for ruggedized circuit designs
Dynamic dv/dt rating to handle fast switching transitions
Surface-mount D2PAK (TO-63) package optimized for high current applications

Single FETs, MOSFETs Applications

High current power switching circuits
DC-DC converter topologies
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance status. Suffixes such as -GE3 indicate lead-free and halogen-free construction, while PbF variants denote lead terminations that are not RoHS-compliant. Confirm the packaging format matches project requirements, as options include tape and reel or tube configurations. Ensure the selected variant aligns with environmental regulations applicable to the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-Channel MOSFET is required in a surface-mount TO-263 package. The logic-level gate drive allows direct interfacing with standard logic outputs without requiring complex gate driver circuits. Verify thermal management capabilities against the linear derating factor and junction-to-ambient resistance ratings for the intended PCB layout.

Single FETs, MOSFETs Part Context

This part belongs to the SiHL540 series of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to provide a combination of fast switching speeds, ruggedized design, and cost-effectiveness. The D2PAK package accommodates large die sizes to achieve low internal connection resistance and high power dissipation capabilities suitable for demanding power electronics applications.