Single FETs, MOSFETs IRLR7807ZCPBF product image

IRLR7807ZCPBF

$0.52
  • Description:MOSFET N-CH 30V 43A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:f9a0e071cc07 Category: Brand:

  
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IRLR7807ZCPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 43A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLR7807ZCPBF

  • Description:MOSFET N-CH 30V 43A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:13.8mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):40W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRLR7807ZCPBF

IRLR7807ZCPBF

Single FETs, MOSFETs Overview

The IRLR7807ZCPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a DPAK (TO-252) surface-mount package with three pins. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 43 A at 25°C. Key electrical parameters include a maximum on-resistance of 13.8 mΩ at 10 V gate drive and 18.2 mΩ at 4.5 V. Typical gate charge is 7 nC at 4.5 V, with a threshold voltage range of 1.35 V to 2.25 V. Maximum power dissipation is 40 W, and the junction temperature rating reaches 175°C.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate design enabling low on-resistance at reduced gate drive voltages
  • Fully characterized avalanche breakdown voltage and current capabilities
  • Ultra-low gate impedance for efficient switching performance

Single FETs, MOSFETs Applications

  • High-frequency synchronous buck converters in computer processor power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation to confirm exact packaging configuration, as variations exist between tape-and-reel and tube formats. Confirm RoHS compliance status through the manufacturer's certification records. Ensure the component matches the required thermal resistance specifications for the intended heat sink or PCB layout application.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling is required within a compact surface-mount footprint. The logic-level gate threshold allows direct driving from standard logic controllers without additional level shifting. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance to ensure reliable operation under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology optimized for high-efficiency power switching applications. The DPAK package provides a balance between thermal performance and board space efficiency compared to smaller packages.

Single FETs, MOSFETs Replacement Considerations

The IRLU7807ZCPBF serves as a through-hole alternative within the same series, offering identical electrical characteristics but utilizing an I-Pak (TO-251AA) package instead of the surface-mount DPAK form factor.

IRLR7807ZCPBFIRLR7807ZCPBF
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