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IS202G is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISOLTR 5.3KV 1CH TRANS 6-DIP. Review the specifications below when checking this part for your BOM.
The IS202G is a high-density phototransistor optically coupled isolator manufactured by Isocom Components. It consists of an infrared light emitting diode and an NPN silicon photo transistor housed in a space-efficient dual in-line plastic package with a 10mm lead spread configuration. The device provides a high isolation voltage of 5.3kVRMS and 7.5kVPK, ensuring robust signal transmission between systems of different potentials. It features a minimum collector-emitter breakdown voltage (BVCEO) of 70V. All electrical parameters are 100% tested to ensure reliability.
Verify the specific suffix 'G' indicates the 10mm lead spread option as documented in the official datasheet. Confirm that the required package variant matches the physical footprint requirements of the target PCB layout. Ensure compatibility with the specified isolation voltage ratings for the intended circuit environment before finalizing procurement.
Select this component when high density and extended lead spacing are required for through-hole mounting. The 10mm lead spread facilitates easier handling and insertion in certain industrial enclosures. Consider the 70V BVCEO rating for applications requiring higher voltage tolerance at the output stage compared to standard low-voltage isolators.
The IS202G belongs to the IS20*, ISD20*, and ISQ20* series of optically coupled isolators from Isocom Components. This family utilizes infrared LEDs paired with NPN silicon phototransistors. The 'G' suffix specifically denotes the 10mm lead spread variation within the dual in-line plastic package lineup, distinguishing it from standard pitch versions.
Cross-reference with other high-density phototransistor optocouplers offering similar 10mm lead spread configurations. Verify pinout compatibility and electrical characteristics such as current transfer ratio and isolation voltage against existing designs to ensure functional equivalence without redesigning the host circuit.
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