Transistor, Photovoltaic Output Optoisolators IS202G product image

IS202G

$0.20
  • Description:OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
  • Series:IS20
  • Mfr:Isocom Components 2004 LTD
  • Package:Tube

SKU:ef559fd1a339 Category: Brand:

  
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IS202G is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISOLTR 5.3KV 1CH TRANS 6-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for IS202G

  • Description:OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
  • Series:IS20
  • Mfr:Isocom Components 2004 LTD
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5300Vrms
  • Current Transfer Ratio (Min):125% @ 10mA
  • Current Transfer Ratio (Max):250% @ 10mA
  • Turn On / Turn Off Time (Typ):3µs, 2.5µs
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Transistor
  • Voltage - Output (Max):70V
  • Current - Output / Channel:50mA
  • Voltage - Forward (Vf) (Typ):1.2V
  • Current - DC Forward (If) (Max):50 mA
  • Vce Saturation (Max):400mV
  • Operating Temperature:-25°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.400", 10.16mm)
  • Supplier Device Package:6-DIP
  • Grade:-
  • Qualification:-

Transistor, Photovoltaic Output Optoisolators datasheet and documents for IS202G

IS202G

Transistor, Photovoltaic Output Optoisolators Overview

The IS202G is a high-density phototransistor optically coupled isolator manufactured by Isocom Components. It consists of an infrared light emitting diode and an NPN silicon photo transistor housed in a space-efficient dual in-line plastic package with a 10mm lead spread configuration. The device provides a high isolation voltage of 5.3kVRMS and 7.5kVPK, ensuring robust signal transmission between systems of different potentials. It features a minimum collector-emitter breakdown voltage (BVCEO) of 70V. All electrical parameters are 100% tested to ensure reliability.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • High isolation voltage capability for safe signal transmission across potential differences
  • Space-efficient dual in-line plastic package design with extended 10mm lead spread
  • High collector-emitter breakdown voltage for reliable operation
  • 100% electrical parameter testing for quality assurance

Transistor, Photovoltaic Output Optoisolators Applications

  • Computer terminals
  • Industrial systems controllers
  • Signal transmission between systems of different potentials and impedances

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix 'G' indicates the 10mm lead spread option as documented in the official datasheet. Confirm that the required package variant matches the physical footprint requirements of the target PCB layout. Ensure compatibility with the specified isolation voltage ratings for the intended circuit environment before finalizing procurement.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when high density and extended lead spacing are required for through-hole mounting. The 10mm lead spread facilitates easier handling and insertion in certain industrial enclosures. Consider the 70V BVCEO rating for applications requiring higher voltage tolerance at the output stage compared to standard low-voltage isolators.

Transistor, Photovoltaic Output Optoisolators Part Context

The IS202G belongs to the IS20*, ISD20*, and ISQ20* series of optically coupled isolators from Isocom Components. This family utilizes infrared LEDs paired with NPN silicon phototransistors. The 'G' suffix specifically denotes the 10mm lead spread variation within the dual in-line plastic package lineup, distinguishing it from standard pitch versions.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

Cross-reference with other high-density phototransistor optocouplers offering similar 10mm lead spread configurations. Verify pinout compatibility and electrical characteristics such as current transfer ratio and isolation voltage against existing designs to ensure functional equivalence without redesigning the host circuit.

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