Memory IC IS42S16160D-75EBL-TR product image

IS42S16160D-75EBL-TR

  • Description:IC DRAM 256MBIT PAR 54TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:1729b1b89a00 Category: Brand:

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IS42S16160D-75EBL-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 256MBIT PAR 54TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S16160D-75EBL-TR

  • Description:IC DRAM 256MBIT PAR 54TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:256Mbit
  • Memory Organization:16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TFBGA
  • Supplier Device Package:54-TW-BGA (8x13)
  • Access Time:5.5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S16160D-75EBL-TR

IS42S16160D-75EBL-TR

Memory IC Overview

The IS42S16160D-75EBL-TR is a 256Mb Synchronous DRAM manufactured by ISSI. It operates at a maximum clock frequency of 133 MHz with a CAS latency of 2, achieving an access time of 5.5 ns. The device features a 16-bit data bus width and is organized as 16M x 16. It utilizes a single 3.3V power supply and supports LVTTL interface logic. The component is housed in a 54-ball BGA package.

Memory IC Feature Summary

  • Fully synchronous operation with all signals referenced to the positive clock edge
  • Internal bank architecture for hiding row access and precharge times
  • Programmable burst lengths including sequential and interleave sequences
  • Supports auto refresh and self-refresh modes for power management

Memory IC Applications

  • High-speed data transfer systems using pipeline architecture
  • Memory systems requiring synchronous burst read/write operations
  • Applications utilizing internal bank interleaving for seamless random access

Memory IC Procurement Notes

Verify the specific -75E speed grade against system timing requirements, as it differs from standard commercial variants. Confirm the 54-ball BGA package dimensions match the PCB footprint. Ensure the LVTTL interface voltage levels are compatible with the host controller logic. Check for RoHS compliance status if required by manufacturing standards.

Memory IC Selection Notes

Select this part when a 133 MHz synchronous memory solution with a 16-bit interface is required. The -75E grade offers faster access times compared to standard -7 grades. Consider the 54-ball BGA package for compact surface-mount designs. Verify that the 3.3V operating voltage aligns with the target system's power rails.

Memory IC Part Context

This component belongs to the IS42S16160D series of 256Mb SDRAMs. It shares architectural similarities with other ISSI SDRAM products but is distinguished by its specific speed grade and package configuration. The device is designed for high-performance applications requiring reliable synchronous data handling.

Memory IC Replacement Considerations

IS42S16160D-7BL is a lower speed variant within the same series.

IS42S16160D-75EBL-TRIS42S16160D-75EBL-TR

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