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IS42S16160G-6TLI-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 256MBIT PAR 54TSOP II. Review the specifications below when checking this part for your BOM.
The IS42S16160G-6TLI-TR is a 256Mb Synchronous DRAM manufactured by ISSI. It features a 16M x 16 organization with a 16-bit data bus width and supports clock frequencies up to 166 MHz. The device utilizes a 54-pin TSOP-II package and operates within a supply voltage range of 3.0V to 3.6V. Designed for industrial applications, it functions reliably between -40°C and +85°C. Key timing specifications include a 6ns access time and a CAS latency of 3 clocks at the specified frequency.
Verify component authenticity through authorized channels due to the NRND status. Confirm that the specific ordering suffix matches the required industrial temperature grade and tape-and-reel packaging format. Ensure design compatibility with the 54-pin TSOP-II footprint and validate signal integrity for the LVTTL interface before finalizing procurement orders.
Select this component when a 256Mb capacity with a 16-bit data path is required for synchronous memory applications. The industrial temperature rating makes it suitable for harsh environments. Consider the 54-pin TSOP-II package constraints regarding board space and thermal dissipation requirements compared to BGA alternatives.
This part belongs to the IS42S16160G series of 256Mb SDRAMs from Integrated Silicon Solution. It shares architectural similarities with the IS42S83200G but differs in data bus width and internal organization. The '6' designation indicates the 166MHz speed grade, while 'TLI' specifies the industrial temperature range and lead-free TSOP-II packaging configuration.
Public confirmed substitute part numbers: IS42S16160B-6TLI-TR (Note: Access time differs at 5.4 ns).
DQML and DQMH serve as byte masks for the lower and upper bytes of the I/O buffers, controlling read output enablement and write data masking independently.
Auto Precharge initiates the precharge process at the earliest valid stage within a burst sequence, allowing the accessed row to be closed automatically without an explicit command.
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