Memory IC IS42S16320B-75ETL-TR product image

IS42S16320B-75ETL-TR

  • Description:IC DRAM 512MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:a8fd0abe5a07 Category: Brand:

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IS42S16320B-75ETL-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 512MBIT PAR 54TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S16320B-75ETL-TR

  • Description:IC DRAM 512MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:512Mbit
  • Memory Organization:32M x 16
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:54-TSOP II
  • Access Time:5.5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S16320B-75ETL-TR

IS42S16320B-75ETL-TR

Memory IC Overview

The IS42S16320B-75ETL-TR is a 512Mb Synchronous DRAM manufactured by ISSI. It operates at a maximum clock frequency of 133 MHz with a CAS latency of 2 clocks. The device features a 16-bit data bus width and an organization of 32M x 16. Access time from the clock edge is 5.5 ns. It utilizes a 54-pin TSOP-II package and functions within a supply voltage range of 3.0 V to 3.6 V for both Vdd and Vddq.

Memory IC Feature Summary

  • Fully synchronous interface with all signals referenced to the positive clock edge
  • Internal bank architecture allows hiding row access and precharge times
  • Supports programmable burst lengths including sequential and interleave sequences
  • Includes auto-refresh, self-refresh, and power-down modes for power management

Memory IC Applications

  • High-speed data transfer systems using pipeline architecture
  • Memory systems requiring 3.3V operation
  • Applications utilizing LVTTL compatible interfaces
  • Systems needing random column address changes every clock cycle

Memory IC Procurement Notes

Verify the specific suffix '75E' against official datasheets to confirm the 133 MHz speed grade and 5.5 ns access time. Ensure the 'TR' suffix matches the required tape and reel packaging format. Confirm that the automotive or industrial temperature range requirements align with the specific grade indicated in the full part number.

Memory IC Selection Notes

Select this component when a 512Mb density with a 16-bit interface is required. It is suitable for designs needing 133 MHz operation with low CAS latency. Consider the 54-pin TSOP-II form factor for surface mount assembly constraints. Verify compatibility with LVTTL logic levels for signal integrity.

Memory IC Part Context

This part belongs to the IS42S16320B series of 512Mb SDRAMs. It shares architectural similarities with the IS42S86400B but differs in organization and pinout. The series supports multiple speed grades and packages, including BGA options. It is designed for high-performance memory applications requiring synchronous dynamic random access.

Memory IC Replacement Considerations

Check for other speed grades within the IS42S16320B family, such as -6 or -7 variants, if timing requirements allow. Verify pin-to-pin compatibility with alternative manufacturers offering 512Mb x16 SDRAM in 54-pin TSOP-II packages.

IS42S16320B-75ETL-TRIS42S16320B-75ETL-TR

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