Memory IC IS42S16800E-6TL product image

IS42S16800E-6TL

  • Description:IC DRAM 128MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:baa01ffa6508 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IS42S16800E-6TL is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 128MBIT PAR 54TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S16800E-6TL

  • Description:IC DRAM 128MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:128Mbit
  • Memory Organization:8M x 16
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:54-TSOP II
  • Access Time:5.4 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S16800E-6TL

IS42S16800E-6TL

Memory IC Overview

The IS42S16800E-6TL is a 128Mb Synchronous DRAM manufactured by ISSI. It features an 8M x 16 organization and operates at a maximum clock frequency of 166 MHz with a CAS latency of 3. The device utilizes a 54-pin TSOP II package and supports a 3.3V power supply range from 3.0V to 3.6V. Key timing parameters include a cycle time of 6 ns and an access time of 5.4 ns. It is designed for industrial temperature applications ranging from -40°C to +85°C.

Memory IC Feature Summary

  • Fully synchronous interface with all signals referenced to the positive clock edge.
  • Internal bank architecture allows hiding row access and precharge times for seamless operation.
  • Supports programmable burst lengths including sequential and interleave sequences.
  • Includes auto-refresh, self-refresh, and power-down modes for power management.

Memory IC Applications

  • High-speed data transfer systems requiring pipeline architecture
  • Industrial embedded memory solutions
  • Consumer electronics utilizing 3.3V logic interfaces

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency for your design. Confirm the TSOP II package dimensions align with your PCB footprint constraints. Ensure the industrial temperature rating meets your operational environment requirements. Check for RoHS compliance status if mandated by your project specifications.

Memory IC Selection Notes

Select this component when a 128Mb density with an 8M x 16 configuration is required. It is suitable for designs needing 166 MHz performance with LVTTTL compatibility. Consider the 54-pin TSOP II form factor for surface-mount assembly needs. Verify that the 3.3V operating voltage aligns with your system's power rails.

Memory IC Part Context

This part belongs to the IS42S16800E series of SDRAMs from Integrated Silicon Solution Inc. The series offers various speed grades and packaging options, including BGA configurations. It is engineered for high-density memory applications requiring reliable synchronous data handling in standard 3.3V environments.

Memory IC Replacement Considerations

IS42S16800J-6TLI is a manufacturer-recommended alternative within the same family offering similar electrical characteristics and pinout compatibility.

IS42S16800E-6TLIS42S16800E-6TL

Click on the inquiry