IS42S16800E-75EBL

Memory IC Overview

The IS42S16800E is a 128Mb Synchronous DRAM organized as 8M x 16, featuring four internal banks. It operates with 3.3V Vdd and Vddq supplies and utilizes an LVTTL interface. The device supports clock frequencies of 200, 166, 143, and 133 MHz for CAS Latency 3, and up to 133 MHz for CAS Latency 2. Key timing parameters include a minimum cycle time of 7.5 ns at CL=2 and access times ranging from 5.4 ns to 6.5 ns depending on the speed grade.

Memory IC Feature Summary

• Fully synchronous operation with all signals referenced to the positive clock edge
• Internal bank architecture allows hiding row access and precharge cycles
• Supports programmable burst lengths including sequential and interleave sequences
• Includes auto refresh and self-refresh modes for power management

Memory IC Applications

• High-speed data transfer systems using pipeline architecture
• Memory systems requiring interleaved bank access for seamless operation
• Applications utilizing LVTTL compatible interfaces
• Industrial temperature environment deployments

Memory IC Procurement Notes

Verify the specific speed grade suffix (e.g., -75E) matches the required clock frequency and timing constraints. Confirm the package type, such as 54-pin TSOP II or TF-BGA, aligns with the board layout. Ensure the voltage specifications for Vdd and Vddq are strictly maintained within the recommended operating conditions to prevent device damage.

Memory IC Selection Notes

Select this component when a 128Mb capacity with a 16-bit data width is required. Consider the available packages, specifically the 54-pin TSOP II or 54-ball TF-BGA options. Evaluate the necessary clock speeds against the supported CAS latencies to ensure system timing requirements are met. Verify industrial temperature availability if operating in harsh environments.

Memory IC Part Context

This part belongs to the IS42S81600E/IS42S16800E family of 128Mb SDRAMs from Integrated Silicon Solution Inc. It shares core architectural features with the x8 variant but provides a 16-bit data bus width. The device is designed for high-performance memory applications requiring synchronous dynamic random-access capabilities.

Memory IC Replacement Considerations

The IS42S81600E serves as a functional alternative within the same family but differs in data width (x8 vs x16). Direct substitution requires verifying pin compatibility and ensuring the system controller supports the specific bus width. No other cross-model substitutes are documented in the provided datasheet.