Memory IC IS42S32160B-7BLI product image

IS42S32160B-7BLI

  • Description:IC DRAM 512MBIT PAR 90LFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:3f124862d769 Category: Brand:

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IS42S32160B-7BLI is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 512MBIT PAR 90LFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S32160B-7BLI

  • Description:IC DRAM 512MBIT PAR 90LFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:512Mbit
  • Memory Organization:16M x 32
  • Memory Interface:Parallel
  • Clock Frequency:143 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:90-LFBGA
  • Supplier Device Package:90-LFBGA (13x11)
  • Access Time:5.4 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S32160B-7BLI

IS42S32160B-7BLI

Memory IC Overview

The IS42S32160B-7BLI is a 512Mb Synchronous DRAM manufactured by ISSI. It features a 16M x 32 organization across four internal banks and operates at a maximum clock frequency of 143 MHz with a CAS latency of 3. The device utilizes a single 3.3V power supply and supports an LV TTL interface. Key timing parameters include a cycle time of 7 ns and an access time of 5.4 ns from the clock edge. It offers programmable burst lengths, auto-refresh capabilities, and self-refresh modes for power management.

Memory IC Feature Summary

  • Fully synchronous operation with all signals referenced to the positive clock edge
  • Internal bank architecture enables row access hiding and precharge operations
  • Supports programmable burst lengths including sequential and interleave sequences
  • Includes auto-refresh and self-refresh modes for power conservation

Memory IC Applications

  • High-speed data transfer systems utilizing pipeline architecture
  • Memory subsystems requiring seamless random-access operations
  • Applications necessitating low-voltage TTL compatible interfaces

Memory IC Procurement Notes

Verify the specific speed grade suffix against the datasheet to ensure compatibility with system timing requirements. Confirm that the package type matches the intended PCB layout constraints. Check for any end-of-life notifications or product change notices associated with this component before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a 512Mb density with a 32-bit data bus width is required. Ensure the design accommodates the 3.3V operating voltage and the specific thermal characteristics of the BGA package. Consider the available refresh cycles per interval when designing the memory controller logic for stability.

Memory IC Part Context

This part belongs to the IS42S32160B series of SDRAM devices from Integrated Silicon Solution Inc. The series provides high-speed CMOS dynamic random-access memory solutions designed for various commercial and industrial temperature ranges. It serves as a foundational memory component for embedded systems and general-purpose computing applications.

Memory IC Replacement Considerations

IS42S32160F-7BLI

Memory IC FAQ

What is the internal organization of the IS42S32160B?

The device is organized as 4 Meg x 32 bit x 4 Banks.

How does the Auto Precharge function operate?

Auto Precharge initiates a precharge at the earliest valid stage within a burst sequence when A10 is set HIGH during a READ or WRITE command.

IS42S32160B-7BLIIS42S32160B-7BLI

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