IS42S32160B-7TLI

Memory IC Overview

The IS42S32160B-7TLI is a 512Mb Synchronous DRAM manufactured by ISSI. It features a 16M x 32 organization across four internal banks and operates with a single 3.3V power supply. The device utilizes an LVTTL interface and supports clock frequencies of up to 143 MHz. Key timing parameters include a CAS latency of 3 clocks with a maximum access time of 5.4 ns, or CAS latency of 2 clocks with a maximum access time of 6.5 ns. It is housed in an 86-pin TSOP-II package.

Memory IC Feature Summary

• Supports fully synchronous operation with all signals referenced to the positive clock edge.
• Includes internal bank architecture to hide row access and precharge times for high-speed random access.
• Features programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequences.
• Provides auto-refresh and self-refresh modes to maintain data integrity while managing power consumption.

Memory IC Applications

• High-speed data transfer systems requiring pipeline architecture
• Memory subsystems utilizing 3.3V logic interfaces
• Applications requiring interleaved bank access to minimize latency

Memory IC Procurement Notes

Verify the specific speed grade suffix (e.g., -7) against the required clock frequency and timing constraints. Confirm that the 86-pin TSOP-II package matches the target PCB footprint. Ensure the design accommodates the LVTTL voltage levels and 3.3V supply requirements specified in the datasheet.

Memory IC Selection Notes

Select this component when a 512Mb density with a 32-bit data bus width is required. Choose based on the necessary operating temperature range, as industrial grades support -40°C to +85°C. Consider the 143 MHz performance limit when designing clock circuits for synchronous memory controllers.

Memory IC Part Context

This part belongs to the IS42S32160B series of 512Mb SDRAMs from Integrated Silicon Solution Inc. The series offers various package options including W-BGA and different speed grades to accommodate diverse system timing requirements and form factor constraints.

Memory IC Replacement Considerations

IS42S32160F-7TLI: Offers similar specifications but may have different electrical characteristics or availability status.

Memory IC FAQ

How does the Auto Precharge function operate?

Auto Precharge initiates at the earliest valid stage within a burst sequence. When A10 is HIGH during a READ or WRITE command, the accessed row is automatically precharged upon completion of the burst without requiring an explicit PRECHARGE command.

What is the refresh requirement for this device?

The device requires 8192 refresh cycles every 64 ms for Commercial, Industrial, and Automotive Grade A1 versions. Automotive Grade A2 versions require 8192 refresh cycles every 16 ms.