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IS42S32160C-6BLI-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 512MBIT PARALLEL 90WBGA. Review the specifications below when checking this part for your BOM.
The IS42S32160C-6BLI-TR is a 512Mb Synchronous DRAM manufactured by ISSI. It features a 16M x 32 organization and operates at clock frequencies of 166 MHz or 133 MHz. The device utilizes a +3.3V power supply with an LV TTL interface. Key timing parameters include a CAS latency of 2 or 3 clocks, with access times ranging from 5.4 ns to 6.5 ns depending on the configuration. It is housed in a 90-ball BGA package (8x13mm) and supports fully synchronous operation with internal pipelined architecture.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for any specific environmental certifications required for your region. Ensure that the ordering suffix matches the exact package and temperature range specifications needed for your design. Request official datasheets and test reports to validate performance characteristics before finalizing procurement decisions.
Select this component when a 512Mb capacity with a 32-bit data bus width is required. Consider the 166 MHz operating speed for high-bandwidth applications. Evaluate the 90-ball BGA package size against available PCB space constraints. Check compatibility with existing system voltage levels and interface requirements to ensure seamless integration into the target hardware platform.
This part belongs to the IS42S32160C series of SDRAMs produced by Integrated Silicon Solution Inc. It is designed as a quad 4M x 32 DRAM internally configured by stacking two 256Mb, 16Mx16 devices. The series offers various options including different die revisions, packages, and temperature ranges to suit diverse application needs.
IS42S32160F-6BLI-TR
The programmable mode register allows selection of burst lengths of 1, 2, 4, 8, or full page.
Data masking is controlled individually by DQM0-DQM3 inputs, which place the I/O buffers in a high-impedance state when sampled HIGH.
The device requires 8192 refresh cycles within 64ms, handled automatically by the internal refresh controller during Auto Refresh or Self Refresh modes.
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