IS42S32160C-6BLI

Memory IC Overview

The IS42S32160C-6BLI is a 512Mb Synchronous DRAM manufactured by ISSI. It features a 16M x 32 organization and operates at clock frequencies of 166 MHz or 133 MHz. The device utilizes a fully synchronous interface with an internal pipelined architecture, registering all inputs and outputs on the rising edge of the clock. It supports programmable CAS latency of 2 or 3 clocks and offers burst lengths of 1, 2, 4, 8, or full page. The component operates within a voltage range of +3.3V ± 0.3V and includes LV TTL interface compatibility.

Memory IC Feature Summary

• Fully synchronous operation with internal pipelined architecture for high-speed data transfer
• Programmable mode register supporting variable CAS latency and burst configurations
• Individual byte control via DQM signals to mask input and output data
• Supports Auto Refresh and Self Refresh modes for power management

Memory IC Applications

• High-speed data buffering in computer systems
• Graphics memory applications requiring parallel data access
• Embedded systems utilizing synchronous dynamic random access memory
• Industrial equipment requiring extended temperature range operation

Memory IC Procurement Notes

Verify the specific suffix 'BLI' against the manufacturer's current datasheet to confirm package dimensions and lead-free status. Ensure the ordering code matches the required temperature grade, as commercial and industrial options exist within the IS42S32160C series. Confirm availability of the 90 Ball BGA package variant prior to finalizing procurement plans.

Memory IC Selection Notes

Select this component when a 512Mb capacity with a 32-bit data bus width is required. The -6 speed grade indicates suitability for 166 MHz operations with a 6.0 ns access time at CAS latency 3. Consider the 90-ball BGA package for surface mount applications where board space is limited. Verify that the system design accommodates the +3.3V power supply requirements and LV TTL logic levels.

Memory IC Part Context

The IS42S32160C belongs to the IS42S32160 family of SDRAMs from Integrated Silicon Solution Inc. This family provides 512Mb density organized as quad 4M x 32 banks. The C revision die is integrated into a 90-ball FBGA package measuring 8mm by 13mm. The device is designed to replace older asynchronous DRAMs in high-performance computing environments.

Memory IC Replacement Considerations

IS42S32160F-6BLI

Memory IC FAQ

How is the burst length configured in the IS42S32160C?

The burst length is programmed via the Mode Register Set command using address pins A2, A1, and A0. Valid settings include burst lengths of 1, 2, 4, 8, or full page.

What is the function of the DQM pins?

DQM0 through DQM3 are byte-specific controls that place the I/O buffers in a high-impedance state when sampled HIGH. They mask input data during write cycles and output data during read cycles.

How does the device handle refresh operations?

The IS42S32160C supports both Auto Refresh and Self Refresh modes. Auto Refresh requires external commands every 64ms, while Self Refresh allows the device to maintain data internally with minimal power consumption when CKE is low.