Memory IC IS42S32200C1-55TL product image

IS42S32200C1-55TL

  • Description:IC DRAM 64MBIT PAR 86TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:639ae8a755fb Category: Brand:

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IS42S32200C1-55TL is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 64MBIT PAR 86TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S32200C1-55TL

  • Description:IC DRAM 64MBIT PAR 86TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:64Mbit
  • Memory Organization:2M x 32
  • Memory Interface:Parallel
  • Clock Frequency:183 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.15V ~ 3.45V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package:86-TSOP II
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S32200C1-55TL

IS42S32200C1-55TL

Memory IC Overview

The IS42S32200C1-55TL is a 64-Mbit Synchronous DRAM manufactured by ISSI. It features a 32-bit data bus width and an organization of 512K bits x 32 bits across four internal banks. The device supports clock frequencies up to 183 MHz with a CAS latency of 3, achieving a maximum access time of 5.5 ns. It operates on a single 3.3V power supply and utilizes LVTTL interface logic. The component is housed in an 86-pin TSOP II package and is rated for industrial temperature ranges.

Memory IC Feature Summary

  • Quad-bank architecture enables interleaving operations to hide precharge times
  • Supports programmable burst lengths including sequential and interleave sequences
  • Includes auto-refresh and self-refresh modes for power management
  • Features automatic column address generation during burst accesses

Memory IC Applications

  • High-speed data transfer systems requiring pipeline architecture
  • Industrial memory subsystems operating within specified temperature grades
  • Embedded applications utilizing synchronous dynamic random-access memory interfaces

Memory IC Procurement Notes

Verify the specific speed grade suffix (e.g., -55) against the manufacturer's current datasheet revision to ensure timing compatibility. Confirm that the 86-pin TSOP II package dimensions match the target PCB footprint requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly process.

Memory IC Selection Notes

Select this component when a 64-Mbit density with a 32-bit interface is required for synchronous memory applications. Ensure the system design accommodates the 3.3V power supply and LVTTL signal levels. Consider the four-bank structure for performance optimization through bank interleaving. Verify that the chosen speed grade meets the maximum clock frequency demands of the host processor or controller.

Memory IC Part Context

This part belongs to the IS42S32200C1 family of 64-Mbit SDRAMs from Integrated Silicon Solution, Inc. The series offers various speed grades and packaging options, including BGA configurations. The C1 designation typically indicates specific electrical characteristics and manufacturing revisions within the broader product line designed for general-purpose high-speed memory applications.

Memory IC Replacement Considerations

Cross-reference with other ISSI parts in the IS42S32200 series for alternative speed grades or packages. Verify pinout compatibility before substituting with devices from different manufacturers offering similar 64-Mbit SDRAM specifications.

IS42S32200C1-55TLIS42S32200C1-55TL

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