IS42S32200C1-7TI-TR

Memory IC Overview

The IS42S32200C1-7TI-TR is a 64-Mbit Synchronous DRAM manufactured by ISSI. It features a 32-bit data bus width and operates on a single 3.3V power supply with LVTTL-compatible inputs and outputs. The device is organized as 524,288 bits x 32-bit across four internal banks. It supports clock frequencies up to 143 MHz and achieves an access time of 5.5 ns at CAS latency 3. The component utilizes a pipeline architecture for high-speed data transfer and is available in a lead-free 90-ball BGA package.

Memory IC Feature Summary

• Quad-bank architecture enables interleaving operations to hide row access and precharge times.
• Supports programmable burst lengths including sequential and interleave sequences.
• Includes auto-refresh and self-refresh modes for power management and data retention.
• Features automatic column address generation during burst read and write accesses.

Memory IC Applications

• Wireless access points
• Base stations
• Routers
• Network storage systems

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing this component. Confirm that the -7 speed grade matches the required 143 MHz system timing constraints. Ensure the 90-ball BGA footprint aligns with the target PCB layout design specifications.

Memory IC Selection Notes

Select this part for applications requiring a 32-bit interface and synchronous operation. Consider the quad-bank structure if concurrent access or bank interleaving is necessary to maximize throughput. Verify compatibility with standard LVTTL logic levels used in the host controller.

Memory IC Part Context

This component belongs to the IS42S32200C1 family of 64-Mbit SDRAMs from Integrated Silicon Solution Inc. The series provides various speed grades and package options, including TSOP II and BGA configurations, designed for general-purpose memory applications requiring high-speed parallel data transfer.

Memory IC Replacement Considerations

AS4C2M32S-6BINTR

Memory IC FAQ

How does the device handle row precharging?

The device supports both explicit PRECHARGE commands and an AUTO PRECHARGE function. Auto precharge initiates automatically at the end of a READ or WRITE burst if enabled via the A10 pin.

What is the refresh requirement for this SDRAM?

The device requires 4096 refresh cycles every 64 ms. This can be managed through the AUTO REFRESH command or maintained internally via the SELF REFRESH mode.