Memory IC IS42S32800D-6BLI-TR product image

IS42S32800D-6BLI-TR

  • Description:IC DRAM 256MBIT PAR 90TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:77836de20f4f Category: Brand:

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IS42S32800D-6BLI-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 256MBIT PAR 90TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S32800D-6BLI-TR

  • Description:IC DRAM 256MBIT PAR 90TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:256Mbit
  • Memory Organization:8M x 32
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:90-TFBGA
  • Supplier Device Package:90-TFBGA (8x13)
  • Access Time:5.4 ns

Memory IC datasheet and documents for IS42S32800D-6BLI-TR

IS42S32800D-6BLI-TR

Memory IC Overview

The IS42S32800D-6BLI-TR is a 256Mb Synchronous DRAM manufactured by ISSI. It features an 8M x 32 organization across four internal banks and operates with a 32-bit data bus width. The device supports a maximum clock frequency of 166 MHz, corresponding to a -6 speed grade. Key timing parameters include a CAS latency of 3 clocks with an access time of 5.4 ns, or CAS latency of 2 clocks with an access time of 6.5 ns. It utilizes a single 3.3V power supply and employs an LVTTL interface. The component is housed in a 90-ball TF-BGA package measuring 8mm x 13mm.

Memory IC Feature Summary

  • Fully synchronous operation with all signals referenced to the positive clock edge
  • Internal bank architecture allows hiding row access and precharge times for seamless high-speed random access
  • Supports programmable burst lengths including sequential and interleave sequences
  • Includes auto-refresh and self-refresh modes for power management

Memory IC Applications

  • High-speed data transfer systems utilizing pipeline architecture
  • Memory subsystems requiring 3.3V LVTTL compatible interfaces
  • Applications necessitating interleaved bank operations to hide precharge cycles

Memory IC Procurement Notes

Verify that the specific ordering suffix corresponds to the Industrial temperature range (-40°C to +85°C) and the 90-ball TF-BGA package configuration. Confirm compliance with RoHS directives and ensure the source documentation matches the exact part number designation before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 256Mb capacity with a 32-bit data path is required. Ensure the system design accommodates the 166 MHz maximum clock frequency and the specific timing constraints associated with the -6 speed grade. Verify that the application environment falls within the specified industrial operating temperature range.

Memory IC Part Context

This device belongs to the IS42S32800D series of 256Mb SDRAMs from Integrated Silicon Solution Inc. The series offers various speed grades and package options, including TSOP-II and BGA configurations. The D-series designation typically indicates specific performance characteristics and interface compatibility within the manufacturer's memory product line.

Memory IC Replacement Considerations

IS42S32800L-6BLI-TR

Memory IC FAQ

How does the device handle row precharging during burst operations?

The device supports an Auto Precharge function where the row is automatically precharged at the end of a READ or WRITE burst if A10 is set HIGH during the command.

What is the refresh requirement for this SDRAM?

The device requires 4096 refresh cycles every 64ms for Commercial, Industrial, and Automotive Grade A1 variants.

IS42S32800D-6BLI-TRIS42S32800D-6BLI-TR

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