Memory IC IS42S32800D-75EBI product image

IS42S32800D-75EBI

  • Description:IC DRAM 256MBIT PAR 90TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:d414d106f379 Category: Brand:

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IS42S32800D-75EBI is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 256MBIT PAR 90TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S32800D-75EBI

  • Description:IC DRAM 256MBIT PAR 90TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:256Mbit
  • Memory Organization:8M x 32
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:90-TFBGA
  • Supplier Device Package:90-TFBGA (8x13)
  • Access Time:5.5 ns

Memory IC datasheet and documents for IS42S32800D-75EBI

IS42S32800D-75EBI

Memory IC Overview

The IS42S32800D-75EBI is a 256Mb Synchronous DRAM manufactured by ISSI. It features an 8M x 32 organization across four internal banks and utilizes an LVTTL interface. The device operates on a single 3.3V power supply with a maximum clock frequency of 133 MHz at CAS latency 2. Key timing parameters include a minimum clock cycle time of 7.5 ns and an access time from the clock of 5.5 ns at CAS latency 2. It supports programmable burst lengths, auto-refresh, and self-refresh modes.

Memory IC Feature Summary

  • Supports high-speed data transfer via pipeline architecture with all signals referenced to the positive clock edge.
  • Includes internal bank interleaving capability to hide row access and precharge times for seamless random-access operations.
  • Features programmable burst lengths (1, 2, 4, 8, or full page) and selectable sequential or interleave burst sequences.
  • Provides power-saving modes including power-down and self-refresh to reduce current consumption during idle states.

Memory IC Applications

  • High-performance computing systems requiring fast memory access
  • Embedded systems utilizing synchronous dynamic random-access memory
  • Industrial control applications operating within specified temperature ranges

Memory IC Procurement Notes

Verify the specific suffix '75E' against the official datasheet to confirm it corresponds to the -75E speed grade with 133 MHz operation and 5.5 ns access time. Ensure the package type matches the required 90-ball TF-BGA or 86-pin TSOP-II configuration. Confirm that the automotive or industrial temperature grade aligns with the system's environmental requirements before finalizing procurement.

Memory IC Selection Notes

Select this component when a 256Mb capacity with a 32-bit data bus width is required. It is suitable for designs needing LVTTL compatibility and a single 3.3V supply voltage. Consider the -75E speed grade if the system requires a 133 MHz clock rate with CAS latency 2. Verify that the available package options meet the board layout constraints.

Memory IC Part Context

This part belongs to the IS42S32800D series of 256Mb SDRAMs from Integrated Silicon Solution Inc. The series offers various speed grades and package options to accommodate different performance and form-factor needs. The device is designed for general-purpose synchronous memory applications requiring high bandwidth and low latency.

Memory IC Replacement Considerations

IS42S32800J-75EBLI

IS42S32800D-75EBIIS42S32800D-75EBI

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