Memory IC IS42VM16200C-75BLI product image

IS42VM16200C-75BLI

  • Description:IC DRAM 32MBIT PARALLEL 54TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:ea3e3f5357e7 Category: Brand:

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IS42VM16200C-75BLI is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 32MBIT PARALLEL 54TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42VM16200C-75BLI

  • Description:IC DRAM 32MBIT PARALLEL 54TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile
  • Memory Size:32Mbit
  • Memory Organization:2M x 16
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.95V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TFBGA
  • Supplier Device Package:54-TFBGA (8x8)
  • Access Time:6 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42VM16200C-75BLI

IS42VM16200C-75BLI

Memory IC Overview

The IS42VM16200C-75BLI is a low-power synchronous DRAM manufactured by ISSI. It provides a storage capacity of 32 Mbit, organized as 2M x 16 bits across two internal banks. The device operates with a maximum clock frequency of 133 MHz and features a 6 ns access time. It utilizes a 54-ball TFBGA package (8x8 mm) for surface mount installation. Electrical specifications include a supply voltage range of 3V to 3.6V and an operating temperature range of -40°C to 85°C.

Memory IC Feature Summary

  • Supports fully synchronous operation referenced to the positive edge of the system clock.
  • Includes programmable burst length, CAS latency, and driver strength control via mode registers.
  • Features deep power down mode and partial array self refresh capabilities.
  • Compatible with LVCMOS interface standards for all input and output pins.

Memory IC Applications

  • Mobile electronic devices requiring low-power memory solutions
  • Portable consumer electronics utilizing SDRAM interfaces
  • Industrial systems operating within extended temperature ranges

Memory IC Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required voltage and package variant. Ensure compliance with RoHS directives and check for moisture sensitivity handling requirements during storage and assembly processes.

Memory IC Selection Notes

Select this component when a 32 Mbit density with a 16-bit data bus width is required. Ensure the design supports a 54-ball BGA footprint and accommodates the specified 3.3V logic levels. Verify that the application environment remains within the industrial temperature limits defined in the datasheet.

Memory IC Part Context

This part belongs to the IS42SM/RM/VM16200C family of low-power SDRAMs. The 'VM' designation indicates a specific voltage grade within the series. These devices share common architectural features such as dual-bank organization and synchronous command decoding, differing primarily in electrical characteristics and packaging options.

Memory IC Replacement Considerations

Direct substitutes within the same family include IS42SM16200C and IS42RM16200C. Verify that any replacement part maintains identical pinout compatibility and meets the specific voltage and temperature requirements of the original design.

Memory IC FAQ

How is Partial Array Self Refresh configured?

PASR is configured using the Extended Mode Register, allowing selection of full bank, half bank, or quarter bank self-refresh coverage to reduce power consumption.

What determines the burst wrap behavior?

Burst wrap behavior is determined by the programmed burst length and starting column address, ensuring accesses remain within the selected block boundaries.

IS42VM16200C-75BLIIS42VM16200C-75BLI

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