IS43LR32400F-6BL-TR

Memory IC Overview

The IS43LR32400F-6BL-TR is a 128Mbit Mobile DDR SDRAM organized as 4 banks of 1,048,576 words by 32 bits. It operates at a maximum clock frequency of 166MHz with a data rate up to 333Mbps per pin. The device uses a double-data-rate architecture with a 32-bit bus and LVCMOS compatible I/O levels. Power supply requirements are VDD = 1.8V and VDDQ = 1.8V. It features a 90-ball FBGA package.

Memory IC Feature Summary

• Supports Partial Array Self Refresh (PASR) for reduced power consumption during self-refresh modes.
• Includes Temperature Compensated Self Refresh (TCSR) utilizing an internal sensor to adjust refresh rates based on temperature.
• Offers programmable output driver strength control with selectable settings from full strength down to one-eighth strength.
• Features fully differential clock inputs and bidirectional data strobes for high-speed synchronous operation.

Memory IC Applications

• Mobile handheld devices requiring low-power memory solutions
• Portable consumer electronics such as smartphones and tablets
• Embedded systems with strict power budget constraints

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required package and temperature grade. Confirm that the component meets RoHS compliance standards for your region. Ensure that the procurement channel provides valid traceability documentation. Check for any lead time variations due to manufacturing schedules. Validate that the received units match the datasheet specifications before integration.

Memory IC Selection Notes

Select this component when a 128Mbit capacity with a 32-bit interface is required for mobile applications. Consider the 1.8V power supply requirement for compatibility with system voltage rails. Evaluate the need for PASR and TCSR features if power efficiency in standby modes is critical. Ensure the PCB layout supports the 90-ball FBGA package dimensions and pitch.

Memory IC Part Context

This part belongs to the IS43/46LR32400F series of Mobile DDR SDRAMs manufactured by ISSI. It is designed for portable applications where power conservation and high bandwidth are essential. The series utilizes a 2N prefetch architecture to achieve efficient data transfer rates while maintaining low power consumption characteristics suitable for battery-operated devices.

Memory IC Replacement Considerations

IS43LR32400G-6BLI-TR

Memory IC FAQ

How does the Partial Array Self Refresh feature function?

PASR allows the controller to select specific banks to be refreshed during self-refresh mode, reducing power consumption by ignoring data retention in unselected banks.

What is the purpose of the Temperature Compensated Self Refresh?

TCSR uses an internal temperature sensor to automatically adjust the self-refresh oscillator frequency, optimizing power usage based on the device's operating temperature.