IS45S32200E-6TLA1

Memory IC Overview

The IS45S32200E-6TLA1 is a 64Mb Synchronous DRAM manufactured by ISSI. It features a 32-bit data bus width and an organization of 2M x 32 across four internal banks. The device supports a maximum clock frequency of 166 MHz with a specified access time of 6 ns. It operates on a single 3.3V power supply within a voltage range of 3V to 3.6V. The component is housed in an 86-pin TSOP-II package and is designed for surface mount installation.

Memory IC Feature Summary

• Supports fully synchronous operation with all signals referenced to the positive clock edge.
• Includes internal bank architecture to hide row access and precharge times.
• Features programmable burst lengths, sequences, and CAS latency settings.
• Provides self-refresh modes and power-saving capabilities.

Memory IC Applications

• High-speed data transfer systems requiring pipeline architecture
• Memory subsystems utilizing L VTTL interface compatibility
• Applications requiring interleaved bank operations for seamless access

Memory IC Procurement Notes

Verify the specific speed grade suffix '6' corresponds to the required 166 MHz performance level. Confirm that the 86-pin TSOP-II package matches the target PCB footprint. Ensure the system provides a stable 3.3V supply within the specified operating limits. Check for moisture sensitivity handling requirements during assembly.

Memory IC Selection Notes

Select this component when a 64Mb capacity with a 32-bit interface is required. The 166 MHz speed grade suits high-performance applications. Consider the 86-pin TSOP-II package constraints for board layout. Verify that the L VTTL logic levels are compatible with the host controller.

Memory IC Part Context

This part belongs to the IS45S32200E series of 64Mb SDRAMs from Integrated Silicon Solution. The series utilizes a quad-bank design to enhance throughput. The E variant denotes specific electrical characteristics and timing parameters defined in the official datasheet.

Memory IC FAQ

How does the device handle row precharging?

The device supports Auto Precharge, which initiates precharging at the end of a burst sequence if enabled via the A10 pin during READ or WRITE commands.

What is the function of the DQM pins?

DQM0 through DQM3 control the lower and upper bytes of the DQ buffers, acting as input masks for writes and output enables for reads.