SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IS5G is a high-density phototransistor optically coupled isolator manufactured by Isocom Components 2004 LTD. It features a single channel with transistor output and an integrated base for enhanced performance. The device provides 5300Vrms isolation voltage and operates within a 6-DIP package. Key electrical characteristics include a collector-emitter breakdown voltage of 80V, a collector current of 50mA, and a propagation delay of 2.6µs rise and 2.2µs fall times. The current transfer ratio ranges from 50% to 400%, ensuring reliable signal transmission across the isolation barrier.
Verify the specific suffix designation against official Isocom Components 2004 LTD documentation to confirm pinout compatibility and packaging type. Ensure that the required isolation voltage and current transfer ratio meet your system's safety standards. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications before finalizing procurement orders.
Select the IS5G when a single-channel optocoupler with an integrated base is required for faster switching applications compared to standard phototransistor outputs. Consider the 5300Vrms isolation rating for applications demanding high dielectric strength. Evaluate the 50-400% CTR range to ensure adequate margin for your specific LED drive current and load requirements while maintaining signal integrity.
The IS5G belongs to the family of high-density phototransistor optically coupled isolators produced by Isocom Components 2004 LTD. This manufacturer specializes in infrared optoelectronic devices with extensive industry experience. The component is designed to provide reliable electrical isolation in compact packages, serving as a key element in modern electronic circuits where safety and signal fidelity are paramount.
Publicly confirmed substitute part numbers for the IS5G are not available in the provided source material. Verify compatibility with alternative components by matching the 6-DIP package, 5300Vrms isolation rating, and transistor output configuration with an integrated base.