Memory IC IS61DDB22M18-250M3 product image

IS61DDB22M18-250M3

  • Description:IC SRAM 36MBIT PARALLEL 165LFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:d7a30d53909c Category: Brand:

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IS61DDB22M18-250M3 is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC SRAM 36MBIT PARALLEL 165LFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS61DDB22M18-250M3

  • Description:IC SRAM 36MBIT PARALLEL 165LFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, DDR II
  • Memory Size:36Mbit
  • Memory Organization:2M x 18
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.71V ~ 1.89V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-LFBGA (13x15)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS61DDB22M18-250M3

IS61DDB22M18-250M3

Memory IC Overview

The IS61DDB22M18-250M3 is a 36 Mbit synchronous static random-access memory (SRAM) manufactured by ISSI. It features a memory organization of 2 Megabit x 18 bits and supports a maximum clock frequency of 250 MHz. The device operates within a supply voltage range of 1.71 V to 1.89 V and functions at temperatures between 0°C and +70°C. It utilizes a 165-ball Low-Profile Fine-Pitch Ball Grid Array (LFBGA) package with dimensions of 13x15 mm.

Memory IC Feature Summary

  • Supports Double Data Rate II (DDR-II) interface for high-speed data transfer
  • Integrates a built-in delay-locked loop (DLL) for precise timing control
  • Includes boundary scan (JTAG) functionality for system testing and verification

Memory IC Applications

  • High-performance networking equipment requiring fast packet buffering
  • Telecommunications infrastructure systems
  • Industrial automation controllers
  • Embedded computing platforms

Memory IC Procurement Notes

Verify the specific suffix and package variant against the manufacturer's current datasheet before ordering, as part numbers may have subtle differences in temperature grade or packaging. Confirm availability through authorized distributors, as lead times can vary significantly based on production cycles. Ensure that the procurement channel provides valid traceability documentation for quality assurance purposes.

Memory IC Selection Notes

Select this component when a 36 Mbit capacity with a 18-bit data width is required for DDR-II applications. It is suitable for designs needing a 250 MHz operating speed within a standard commercial temperature range. Engineers should consider the 165-ball LFBGA footprint during PCB layout and ensure power delivery meets the specified 1.71 V to 1.89 V range.

Memory IC Part Context

This SRAM belongs to the IS61DDB series from ISSI, designed for high-density, high-speed memory solutions. It complements other parts in the portfolio like the IS61DDP2B21M18A-400M3L, offering a balance of performance and integration for embedded systems. The inclusion of JTAG support distinguishes it from basic parallel SRAMs, facilitating easier debugging in complex multi-chip modules.

Memory IC Replacement Considerations

Direct replacements include the IS61DDB22M18-250M3LI if an industrial temperature range is needed, though pin compatibility must be verified. Cross-referencing with similar DDR-II SRAMs from other manufacturers requires careful evaluation of voltage levels and timing parameters.

IS61DDB22M18-250M3IS61DDB22M18-250M3

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