IS61LPS102418A-250B3I

Memory IC Overview

The IS61LPS102418A-250B3I is a high-speed, low-power synchronous static RAM with an 18Mb capacity organized as 1M words by 18 bits. It operates at a clock frequency of 250 MHz with a cycle time of 4 ns and a clock access time of 2.6 ns. The device uses a 165-ball TFBGA package (13x15 mm) and supports Vdd supply voltages from 3.135V to 3.465V. It features pipelined architecture, single-cycle deselect, and individual byte write control.

Memory IC Feature Summary

• Synchronous operation with registered address, data, and control inputs controlled by a positive-edge-triggered clock.
• Internal self-timed write cycles initiated by the rising edge of the clock input.
• Individual byte write capability combined with global write options for flexible data management.
• Supports linear or interleave burst sequences via the MODE pin configuration.

Memory IC Applications

• Communication systems requiring high-performance memory
• Networking equipment applications
• Cache controller implementations

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm that the specific ordering suffix matches the required voltage range and temperature grade. Ensure compliance with RoHS3 standards and check for any product change notices affecting the manufacturing process or specifications before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 18Mb synchronous SRAM with 18-bit width is required. Ensure the system design accommodates the 165-TFBGA package dimensions. Verify that the operating environment falls within the specified commercial or industrial temperature ranges. Confirm power supply stability for the 3.3V core and isolated I/O supplies.

Memory IC Part Context

This part belongs to the IS61LPS/VPS102418A family of synchronous pipelined SRAMs manufactured by ISSI. It shares architectural similarities with the IS61LPS51236A and IS61LPS25672A variants, differing primarily in organization and package options. The LPS designation indicates a 3.3V core voltage variant.

Memory IC Replacement Considerations

IS61LPS102418A-250B3LI

Memory IC FAQ

How is the burst sequence order determined?

The burst sequence order is selected using the MODE pin. Tying the pin LOW achieves a linear burst, while tying it HIGH or leaving it floating results in an interleave burst.

What mechanism controls individual byte writes?

Individual bytes are written using the Byte Write Enable (BWE) input combined with one or more individual byte write signals (BWx). Global Write (GW) can also be used to write all bytes simultaneously.