Memory IC IS61LPS25636A-200TQ2I product image

IS61LPS25636A-200TQ2I

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:a3be0a7e01e2 Category: Brand:

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IS61LPS25636A-200TQ2I is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC SRAM 9MBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS61LPS25636A-200TQ2I

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-LQFP (14x20)
  • Access Time:3.1 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS61LPS25636A-200TQ2I

IS61LPS25636A-200TQ2I

Memory IC Overview

The IS61LPS25636A-200TQ2I is a 9 Mbit synchronous static RAM organized as 256K words by 36 bits. It operates with a maximum clock frequency of 200 MHz and features a clock access time of 3.1 ns. The device utilizes a single 3.3V power supply (VDD) and an isolated output buffer supply (VDDQ) rated at 3.3V or 2.5V. It is housed in a 100-pin TQFP package and supports industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

  • Supports internal self-timed write cycles initiated by the rising edge of the clock input.
  • Provides individual byte write control via separate byte enable signals combined with a global byte write enable.
  • Features a snooze mode for reduced-power standby operation during deselect periods.
  • Includes burst sequence control using a MODE input to select between linear and interleave patterns.

Memory IC Applications

  • Communication systems requiring high-speed memory buffering
  • Networking equipment utilizing cache controller interfaces
  • Processor-based architectures needing pipelined memory expansion

Memory IC Procurement Notes

Verify the specific ordering suffix 'TQ2I' corresponds to the 100-pin TQFP package and industrial temperature range (-40°C to +85°C). Confirm that the 'TR' designation is absent, indicating tube packaging rather than reel packaging. Ensure compatibility with 3.3V logic levels for both VDD and VDDQ supplies before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 36-bit data width is required for system bus alignment. The 200 MHz speed grade offers a balance between performance and power consumption compared to faster variants. Verify that the application design accommodates the 100-pin TQFP footprint and thermal requirements associated with synchronous SRAM operation at the specified voltage levels.

Memory IC Part Context

This part belongs to the IS61LPS25636A series of high-speed, low-power synchronous static RAMs. It is fabricated using advanced CMOS technology and integrates a 2-bit burst counter with a high-speed SRAM core. The series is designed to provide burstable, high-performance memory solutions for demanding communication and networking applications.

Memory IC Replacement Considerations

Direct substitutes include the IS61LPS25636A-200B3LI-TR, which shares identical electrical specifications but utilizes a 165-ball BGA package instead of the TQFP form factor. Other family members like the IS61LPS51218A offer different memory organizations and should be evaluated for pin compatibility and interface matching.

IS61LPS25636A-200TQ2IIS61LPS25636A-200TQ2I

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