IS61QDP2B21M36A-333M3L

Memory IC Overview

The IS61QDP2B21M36A-333M3L is a 36Mb Quad Data Rate (QDR) II+ Synchronous SRAM manufactured by ISSI. It features a 1M x 36 organization with a maximum clock frequency of 333 MHz and a typical access time of 0.45 ns. The device utilizes a Double Data Rate (DDR) interface for both read and write input ports, supporting concurrent independent read and write operations through separate ports. It incorporates an on-chip Delay-Locked Loop (DLL) to ensure a wide data valid window and operates with a +1.8V core power supply.

Memory IC Feature Summary

• Supports concurrent independent read and write operations via separate ports
• Features synchronous pipeline read with late write operation
• Includes on-chip Delay-Locked Loop (DLL) for extended data valid window
• Utilizes Double Data Rate (DDR) interface for input ports

Memory IC Applications

• High-speed networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure utilizing QDR interfaces
• Data center storage systems demanding high throughput
• Industrial automation controllers needing fast memory access

Memory IC Procurement Notes

Verify the specific suffix '333M3L' against official datasheets to confirm the 333 MHz speed grade and lead-free LFBGA-165 packaging. Ensure compatibility with +1.8V core voltage requirements. Confirm RoHS compliance status for the specific manufacturing lot. Validate that the application design supports the required DLL locking conditions for optimal performance at the specified clock frequency.

Memory IC Selection Notes

Select this component when a 36Mb capacity with separate read/write ports is required. It is suitable for designs needing a 333 MHz operating frequency with a 0.45 ns access time. Consider the LFBGA-165 package constraints for PCB layout. This part is appropriate for applications where concurrent data handling and precise timing via DLL are critical system requirements.

Memory IC Part Context

This model belongs to the IS61QDP2B series of QDR II+ Synchronous SRAMs from ISSI. The series offers various density options including 18Mb and 36Mb configurations. These devices are designed for high-performance embedded applications requiring fast, deterministic memory access speeds without the complexity of asynchronous control signals.

Memory IC Replacement Considerations

Check for IS61QDP2B21M36A variants with different speed grades or suffixes. Verify pinout and electrical specifications before substituting with other QDR SRAM models from different manufacturers.