Memory IC IS65WV25616DBLL-55CTLA3-TR product image

IS65WV25616DBLL-55CTLA3-TR

  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:740e7daccebc Category: Brand:

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IS65WV25616DBLL-55CTLA3-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC SRAM 4MBIT PARALLEL 44TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS65WV25616DBLL-55CTLA3-TR

  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.3V ~ 3.6V
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS65WV25616DBLL-55CTLA3-TR

IS65WV25616DBLL-55CTLA3-TR

Memory IC Overview

The IS65WV25616DBLL-55CTLA3-TR is a 4M-bit (256K x 16) asynchronous static RAM fabricated using high-performance CMOS technology. It operates within a voltage range of 2.3V to 3.6V and features a typical access time of 55 ns. The device supports industrial (-40°C to +85°C) and automotive (-40°C to +125°C) temperature ranges. Key electrical characteristics include a maximum dynamic operating current of 15 mA and a typical CMOS standby current of 5 µA. It utilizes a single power supply with TTL-compatible interface levels.

Memory IC Feature Summary

  • Ultra-low power consumption with typical 30 mW active operation and 6 µW standby mode
  • Fully static operation requiring no clock or refresh cycles
  • Independent upper and lower byte data control for flexible bus interfacing
  • Dual chip enable inputs (CS1, CS2) for simplified memory expansion

Memory IC Applications

  • Automotive electronic systems requiring extended temperature stability
  • Industrial embedded controllers needing low-power volatile storage
  • Portable devices utilizing single-supply architectures
  • High-speed data buffering in parallel interface circuits

Memory IC Procurement Notes

Verify the specific suffix 'CTLA3' corresponds to the lead-free TSOP II package with copper leadframe as documented in the ordering information. Confirm that the required speed grade matches the 55 ns specification for the automotive A3 temperature range. Ensure compatibility with the 2.3V to 3.6V supply voltage window before integration into the target circuit design.

Memory IC Selection Notes

Select this component when an asynchronous SRAM with independent byte control is required for automotive or industrial environments. The 55 ns speed grade suits applications where moderate access times are acceptable alongside ultra-low standby power. Consider the 48-pin TSOP II package constraints for PCB layout and ensure the system voltage remains within the specified 2.3V to 3.6V operational range.

Memory IC Part Context

This part belongs to the IS65WV25616DxLL family of low-voltage, ultra-low power CMOS static RAMs. The series offers multiple speed grades and packaging options to support diverse commercial, industrial, and automotive requirements. The DBLL variant specifically targets the 2.3V to 3.6V voltage domain, distinguishing it from the lower voltage DALL series.

Memory IC Replacement Considerations

IS62WV25616DBLL-55TLI is a verified equivalent offering identical electrical specifications and functionality in a lead-free TSOP package.

IS65WV25616DBLL-55CTLA3-TRIS65WV25616DBLL-55CTLA3-TR

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