IS66WVE4M16ECLL-70BLI

Memory IC Overview

The IS66WVE4M16ECLL-70BLI is a 64 Mbit pseudo static random access memory (PSRAM) manufactured by ISSI. It utilizes a self-refresh DRAM array organized as 4 Megawords by 16 bits. The device features an asynchronous parallel interface with a 70 ns access time and write cycle time. It operates on a low voltage supply range of 1.7 V to 1.95 V. The component is housed in a 48-ball TFBGA package measuring 6x8 mm and supports surface mount installation. It is rated for industrial operating temperatures ranging from -40°C to +85°C.

Memory IC Feature Summary

• Integrates a self-refresh DRAM array within a PSRAM architecture to eliminate the need for external refresh controllers.
• Supports dual voltage rails allowing separate power supplies for the I/O (VDDQ) and the device core (VDD).
• Includes partial array refresh mode to retain data in specific array portions while reducing standby current drain.
• Features deep power-down mode to minimize power consumption during inactive periods.

Memory IC Applications

• Industrial control systems requiring non-volatile-like retention with SRAM speed.
• Embedded applications utilizing asynchronous memory buses.
• Low-power portable devices operating within the 1.7V to 1.95V voltage range.

Memory IC Procurement Notes

Verify the specific voltage suffix 'C' corresponds to the required 1.7V-1.95V operating range, as other variants exist for higher voltages. Confirm the package type is 48-TFBGA. Check RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the asynchronous interface matches your system controller capabilities.

Memory IC Selection Notes

Select this part when a 64 Mbit capacity with 16-bit width is needed at 70 ns speed. Choose the ECCLL variant specifically for systems constrained to the 1.7V to 1.95V supply voltage domain. Consider the TFBGA package constraints for PCB layout. Verify that the asynchronous interface meets timing requirements compared to synchronous alternatives.

Memory IC Part Context

This component belongs to the IS66WVE4M16 series of PSRAM devices from ISSI. It shares architectural similarities with the EBLL and ALL variants but differs primarily in its specified operating voltage range. The series is designed to provide high-density memory solutions using standard asynchronous interfaces common in legacy and modern embedded designs.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Variants such as IS66WVE4M16EBLL-70BLI or IS66WVE4M16EALL-70BLI share the same package and interface but operate at different voltage levels (2.7V-3.6V). Substitution requires verification of voltage compatibility.