IS66WVH8M8DALL-200B1LI-TR

Memory IC Overview

The IS66WVH8M8DALL-200B1LI-TR is a 64 Mbit HyperBus PSRAM manufactured by ISSI. It features an 8M x 8 organization and operates at a clock frequency of 200 MHz with a 40 ns access time. The device supports a supply voltage range of 1.7 V to 1.95 V and functions within a temperature range of -40°C to +85°C. It is housed in a 24-TFBGA (6x8) package.

Memory IC Feature Summary

• Supports HyperBus interface for high-speed data transfer
• Provides pseudo SRAM functionality with DRAM density
• Operates on low voltage supply ranging from 1.7 V to 1.95 V

Memory IC Applications

• Embedded systems requiring compact memory solutions
• Portable electronic devices with space constraints
• Industrial control applications needing reliable volatile storage

Memory IC Procurement Notes

Verify the specific suffix B1LI-TR against official datasheets to confirm tape and reel packaging details. Ensure compatibility with the required 1.7 V to 1.95 V power domain during system design. Confirm RoHS3 compliance status through manufacturer documentation before integration into regulated assemblies.

Memory IC Selection Notes

Select this component when a small footprint 24-TFBGA package is required alongside high-speed 200 MHz performance. The 1.7 V to 1.95 V operating range makes it suitable for low-power applications. Consider the 40 ns access time for timing-critical embedded designs that benefit from HyperBus efficiency.

Memory IC Part Context

This part belongs to the IS66WVH series of HyperBus PSRAMs from ISSI. It offers a balance of speed and density in a compact form factor. The series is designed to replace traditional SRAM or DRAM in applications where board space and power consumption are critical constraints.

Memory IC Replacement Considerations

Check for IS66WVH8M8 variants with different speed grades or voltage ranges if system requirements change. Verify pinout compatibility with existing PCB layouts when considering alternative packages within the same family.