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ISL28227FUBZ-T13 is listed in the Instrumentation, Op Amps, Buffer Amps range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC OPAMP GP 2 CIRCUIT 8MSOP. Review the specifications below when checking this part for your BOM.
The ISL28227FUBZ-T13 is a dual-channel precision operational amplifier from the Renesas ISL28227 series, housed in an MSOP-8 surface-mount package. It features a gain-bandwidth product of 10 MHz and a slew rate of 3.6 V/us. The device operates on supply voltages ranging from 4.5 V to 40 V or ±2.25 V to ±20 V, with a maximum operating temperature of +125 C. Key electrical specifications include an input offset voltage of 70 uV, input bias current of 12 nA, and input offset current of 1 nA. It delivers 45 mA output current per channel with a typical supply current of 2.2 mA.
Verify the specific suffix T13 indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure moisture sensitivity level handling protocols are followed during storage and assembly processes to maintain component integrity.
Select this component for designs requiring dual-channel precision amplification with moderate bandwidth. Compare input offset voltage and bias current requirements against alternative models in the ISL282xx family. Evaluate thermal management needs given the MSOP-8 package constraints and specified operating temperature range limits.
This part belongs to the ISL28227 series of precision amplifiers manufactured by Renesas Electronics Corporation. The series includes variants such as ISL28227FBZ and ISL28227FUBZ, differing primarily in packaging and reel specifications. The FUBZ designation specifically denotes the MSOP-8 form factor suitable for space-constrained printed circuit board layouts.
ISL28227FBZ serves as a direct functional substitute offering identical electrical characteristics in an SOIC-8 package. Designers must account for pin compatibility and thermal dissipation differences when transitioning between MSOP-8 and SOIC-8 footprints without altering the core circuit topology.
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