Full Half-Bridge (H Bridge) Drivers ISL55110IRZ product image

ISL55110IRZ

$3.54
  • Description:IC HALF BRIDGE DRVR 100MA 16QFN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:a53be18cfa49 Category: Brand:

  
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ISL55110IRZ is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC HALF BRIDGE DRVR 100MA 16QFN. Review the specifications below when checking this part for your BOM.

Full Half-Bridge (H Bridge) Drivers specifications for ISL55110IRZ

  • Description:IC HALF BRIDGE DRVR 100MA 16QFN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Output Configuration:Half Bridge (2)
  • Applications:Digital Imaging
  • Interface:Logic
  • Load Type:Capacitive and Resistive
  • Technology:Power MOSFET
  • Rds On (Typ):3Ohm
  • Current - Output / Channel:100mA
  • Current - Peak Output:3.5A
  • Voltage - Supply:2.7V ~ 5.5V
  • Voltage - Load:5V ~ 13.2V
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Features:-
  • Fault Protection:-
  • Mounting Type:Surface Mount
  • Package / Case:16-TFQFN Exposed Pad
  • Supplier Device Package:16-QFN (4x4)
  • Grade:-
  • Qualification:-

Full Half-Bridge (H Bridge) Drivers datasheet and documents for ISL55110IRZ

ISL55110IRZ

Full Half-Bridge (H Bridge) Drivers Overview

The ISL55110IRZ is a dual high-speed MOSFET driver manufactured by Renesas Electronics. It features two independent drivers in a 16-lead QFN package with an exposed pad. The device operates on a supply voltage range of 2.7V to 5.5V and supports load voltages up to 13.2V. It delivers a peak output current of 3.5A per channel. Typical switching characteristics include a rise time of 6.9ns and a fall time of 6.9ns. The component is designed for surface mount installation and functions within a temperature range of -40°C to +85°C.

Full Half-Bridge (H Bridge) Drivers Feature Summary

  • Dual-channel architecture providing independent control for high-side and low-side power switches.
  • High-speed switching capability optimized for driving capacitive loads in digital imaging applications.
  • Integrated thermal management via an exposed pad design for efficient heat dissipation.

Full Half-Bridge (H Bridge) Drivers Applications

  • Digital imaging systems requiring fast gate drive signals.
  • Power MOSFET switching circuits in portable electronic devices.
  • General-purpose high-speed logic interface applications.

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix 'IRZ' corresponds to the 16-lead QFN package configuration. Confirm that the required operating temperature range aligns with the industrial specification limits. Ensure compatibility with the target PCB footprint dimensions and thermal pad requirements during integration planning.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when dual isolated gate drives are required in a compact form factor. Consider the 3.5A peak current capability for moderate power switching tasks. Evaluate the 6.9ns transition times against system timing constraints. Compare against the ISL55111 series if inverted logic outputs or different packaging options are preferred.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the ISL5511x family of high-speed MOSFET drivers from Renesas. The family includes variants such as the ISL55110 and ISL55111, which share similar electrical performance but may differ in pinout configurations or output logic states. These drivers are positioned for applications demanding rapid switching speeds within low-voltage power management architectures.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

The ISL55110IVZ serves as a functional alternative offering identical electrical specifications in an 8-pin TSSOP package. Verify that the reduced pin count and different physical footprint are compatible with the existing board layout before substitution.

ISL55110IRZISL55110IRZ
$3.54
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