SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
ISL6207HBZ is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.
The ISL6207HBZ is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, housed in an 8-SOIC package. It features non-inverting input logic with VIL and VIH thresholds of 1V and 2V respectively. The device provides peak output currents of 2A for both sourcing and sinking. It supports a maximum high-side voltage of 36V using bootstrap configuration. Typical rise and fall times are 8ns each. The operating junction temperature range is -10°C to 125°C. Supply voltage ranges from 4.5V to 5.5V. It is designed for synchronous MOSFET (N-channel) applications.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the base model may not meet current standards. Check for available alternatives if new production is required. Validate package dimensions against PCB footprint specifications. Ensure thermal management aligns with specified junction temperature limits during operation.
Consider the 8-SOIC package constraints for layout design. Evaluate thermal dissipation capabilities within the -10°C to 125°C operating range. Assess compatibility with 4.5V to 5.5V supply rails. Verify input logic levels match system control signals. Review bootstrap circuit requirements for high-side driving. Compare performance metrics with newer generation drivers if availability is critical.
The ISL6207 series represents Renesas' portfolio of specialized gate drivers for power electronics. This specific variant targets applications requiring robust half-bridge control with moderate current capabilities. The SOIC packaging facilitates surface-mount assembly in compact designs. As part of the broader PMIC lineup, it complements other power management solutions for integrated system architectures.
ISL6207CBZ
The device supports a maximum high-side voltage of 36V when using bootstrap configuration.
Yes, it is designed for synchronous N-channel MOSFET applications.
Explore related parts through Power Management (PMIC), Integrated Circuits (ICs), all product categories, ChipApex homepage.